Low-disorder quantum wire with gate-tunable width and electron density

G. R. Facer; B. E. Kane; A. S. Dzurak; R. G. Clark; N. E. Lumpkin; L. N. Pfeiffer; K. W. West

Low-disorder quantum wire with gate-tunable width and electron density

G. R. Facer, B. E. Kane, A. S. Dzurak, R. G. Clark, N. E. Lumpkin, L. N. Pfeiffer, K. W. West

Research output: Contribution to conference › Paper › peer-review

Abstract

We have fabricated quasi-one dimensional (1D) quantum wires based upon a novel GaAs/AlGaAs heterostructure in which carriers are induced by an epitaxially-grown n ⁺-GaAs gate rather than by modulation doping, thus minimizing disorder. By using side-gates to further constrain the electrons at the centre of the wires, we observe at low temperatures a quantization of the resistance, indicative of ballistic transport through the constriction. Motivated by theoretical predictions concerning electron correlation effects in 1D, we report initial studies of the dependence of observed conductance plateaux upon temperature and electron density.

Original language	English (US)
Pages	166-170
Number of pages	5
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD - Canberra, Aust Duration: Dec 8 1996 → Dec 11 1996

Conference

Conference	Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD
City	Canberra, Aust
Period	12/8/96 → 12/11/96

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

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title = "Low-disorder quantum wire with gate-tunable width and electron density",

abstract = "We have fabricated quasi-one dimensional (1D) quantum wires based upon a novel GaAs/AlGaAs heterostructure in which carriers are induced by an epitaxially-grown n +-GaAs gate rather than by modulation doping, thus minimizing disorder. By using side-gates to further constrain the electrons at the centre of the wires, we observe at low temperatures a quantization of the resistance, indicative of ballistic transport through the constriction. Motivated by theoretical predictions concerning electron correlation effects in 1D, we report initial studies of the dependence of observed conductance plateaux upon temperature and electron density.",

author = "Facer, {G. R.} and Kane, {B. E.} and Dzurak, {A. S.} and Clark, {R. G.} and Lumpkin, {N. E.} and Pfeiffer, {L. N.} and West, {K. W.}",

year = "1996",

language = "English (US)",

pages = "166--170",

note = "Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD ; Conference date: 08-12-1996 Through 11-12-1996",

}

TY - CONF

T1 - Low-disorder quantum wire with gate-tunable width and electron density

AU - Facer, G. R.

AU - Kane, B. E.

AU - Dzurak, A. S.

AU - Clark, R. G.

AU - Lumpkin, N. E.

AU - Pfeiffer, L. N.

AU - West, K. W.

PY - 1996

Y1 - 1996

N2 - We have fabricated quasi-one dimensional (1D) quantum wires based upon a novel GaAs/AlGaAs heterostructure in which carriers are induced by an epitaxially-grown n +-GaAs gate rather than by modulation doping, thus minimizing disorder. By using side-gates to further constrain the electrons at the centre of the wires, we observe at low temperatures a quantization of the resistance, indicative of ballistic transport through the constriction. Motivated by theoretical predictions concerning electron correlation effects in 1D, we report initial studies of the dependence of observed conductance plateaux upon temperature and electron density.

AB - We have fabricated quasi-one dimensional (1D) quantum wires based upon a novel GaAs/AlGaAs heterostructure in which carriers are induced by an epitaxially-grown n +-GaAs gate rather than by modulation doping, thus minimizing disorder. By using side-gates to further constrain the electrons at the centre of the wires, we observe at low temperatures a quantization of the resistance, indicative of ballistic transport through the constriction. Motivated by theoretical predictions concerning electron correlation effects in 1D, we report initial studies of the dependence of observed conductance plateaux upon temperature and electron density.

UR - http://www.scopus.com/inward/record.url?scp=0030376956&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030376956&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030376956

SP - 166

EP - 170

T2 - Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD

Y2 - 8 December 1996 through 11 December 1996

ER -

Low-disorder quantum wire with gate-tunable width and electron density

Abstract

Conference

All Science Journal Classification (ASJC) codes

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