We report the characterization of Bi 2Te 2Se crystals obtained by the modified Bridgman and Bridgman-Stockbarger crystal-growth techniques. X-ray-diffraction study confirms an ordered Se-Te distribution in the inner and outer chalcogen layers, respectively, with a small amount of mixing. The crystals displaying high resistivity (1Ωcm) and low carrier concentration (∼5×1016/cm3) at 4 K were found in the central region of the long Bridgman-Stockbarger crystal, which we attribute to very small differences in defect density along the length of the crystal rod. Analysis of the temperature-dependent resistivities and Hall coefficients reveals the possible underlying origins of the donors and acceptors in this phase.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Dec 15 2011|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics