Low-carrier-concentration crystals of the topological insulator Bi 2Te 2Se

Shuang Jia, Huiwen Ji, E. Climent-Pascual, M. K. Fuccillo, M. E. Charles, Jun Xiong, N. P. Ong, R. J. Cava

Research output: Contribution to journalArticle

116 Scopus citations

Abstract

We report the characterization of Bi 2Te 2Se crystals obtained by the modified Bridgman and Bridgman-Stockbarger crystal-growth techniques. X-ray-diffraction study confirms an ordered Se-Te distribution in the inner and outer chalcogen layers, respectively, with a small amount of mixing. The crystals displaying high resistivity (1Ωcm) and low carrier concentration (∼5×1016/cm3) at 4 K were found in the central region of the long Bridgman-Stockbarger crystal, which we attribute to very small differences in defect density along the length of the crystal rod. Analysis of the temperature-dependent resistivities and Hall coefficients reveals the possible underlying origins of the donors and acceptors in this phase.

Original languageEnglish (US)
Article number235206
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume84
Issue number23
DOIs
StatePublished - Dec 15 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Low-carrier-concentration crystals of the topological insulator Bi <sub>2</sub>Te <sub>2</sub>Se'. Together they form a unique fingerprint.

  • Cite this