We report the realization of a semiconductor injection laser based on intraband transitions with emission wavelengths extending beyond the atmospheric windows. The structure uses the quantum cascade scheme with "chirped" superlattices as active material. Laser action in pulsed operation is achieved at λ ≃ 17 μm up to 150 K, with peak output powers of ∼ 12 mW at cryogenic temperatures.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)