We present recent results on a new type of long-wavelength infrared detector based upon intersubband transitions in a GaAs/AlGaAs quantum well. Photovoltaic quantum well detectors have been constructed which operate in the 10 microm range, and longer wavelengths are possible. Calculations comparing the performance of ideal devices of this type and ideal narrow gap semiconductor detectors are presented. The quantum well detectors are shown to have adequate performance for many array applications. Recent results demonstrating voltage-tunable detectors are also presented.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry