Abstract
This paper reports the realization of a long-wavelength quantum cascade laser employing so-called 'chirped' superlattices and operating at λ approx. 17 μm. This represents the first demonstration of a semiconductor injection laser based on intra-band transitions at wavelengths beyond the atmospheric windows. The structure was grown by molecular beam epitaxy in the InGaAs/InAlAs material system lattice matched to InP substrate.
Original language | English (US) |
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Pages (from-to) | 43-44 |
Number of pages | 2 |
Journal | LEOS Summer Topical Meeting |
State | Published - 1999 |
Externally published | Yes |
Event | Proceedings of the 1999 IEEE/LEOS Summer Topical Meeting on Nanostructures and Quantum Dots - San Diego, CA, USA Duration: Jul 26 1999 → Jul 27 1999 |
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering