This paper reports the realization of a long-wavelength quantum cascade laser employing so-called 'chirped' superlattices and operating at λ approx. 17 μm. This represents the first demonstration of a semiconductor injection laser based on intra-band transitions at wavelengths beyond the atmospheric windows. The structure was grown by molecular beam epitaxy in the InGaAs/InAlAs material system lattice matched to InP substrate.
|Number of pages
|LEOS Summer Topical Meeting
|Published - Jan 1 1999
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering