Location of positive charge trapped near the Si-SiO₂ interface at low temperature

Keyphrases

• Low Temperature 100%
• Si-SiO2 Interface 100%
• Charge Trapping 100%
• Positive Charge 100%
• High Field 33%
• Conduction Band 16%
• Silica 16%
• Field Stress 16%
• Irradiation 16%
• Metal Oxide 16%
• Oxides 16%
• Silicon Structure 16%
• SiO2 Layer 16%
• Depth Profile 16%
• Photon-assisted Tunneling 16%
• Photon Energy 16%
• Fowler-Nordheim Tunneling 16%
• Irradiated Sample 16%
• Capacitance-voltage 16%
• Voltage Curve 16%

Engineering

• Low-Temperature 100%
• Tunnel Construction 50%
• Conduction Band 50%
• Stress Field 50%
• Sio2 Layer 50%
• Electron Capture 50%
• Photon Energy 50%
• Fowler-Nordheim Tunneling 50%
• Depth Profile 50%
• Silicon Oxide 50%