Localization in disordered materials: Binary alloys

E. N. Economou; S. Kirkpatrick; Morrel H. Cohen; T. P. Eggarter

doi:10.1103/PhysRevLett.25.520

Localization in disordered materials: Binary alloys

E. N. Economou, S. Kirkpatrick, Morrel H. Cohen, T. P. Eggarter

Research output: Contribution to journal › Article › peer-review

65 Scopus citations

Abstract

A criterion for localization of electron states in disordered materials is presented. Applications to binary alloys, made using the self-energy calculated in the coherent-potential approximation, confirm the Mott-Cohen-Fritzsche-Ovshinsky model in detail. Mobility edges occur inside the band edges. A mobility gap can appear within the band. The band can split into sub-bands, each with mobility edges. Below a critical concentration, an Anderson transition, where the minority sub-band becomes entirely localized, can occur.

Original language	English (US)
Pages (from-to)	520-524
Number of pages	5
Journal	Physical review letters
Volume	25
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevLett.25.520
State	Published - 1970
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevLett.25.520

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abstract = "A criterion for localization of electron states in disordered materials is presented. Applications to binary alloys, made using the self-energy calculated in the coherent-potential approximation, confirm the Mott-Cohen-Fritzsche-Ovshinsky model in detail. Mobility edges occur inside the band edges. A mobility gap can appear within the band. The band can split into sub-bands, each with mobility edges. Below a critical concentration, an Anderson transition, where the minority sub-band becomes entirely localized, can occur.",

author = "Economou, {E. N.} and S. Kirkpatrick and Cohen, {Morrel H.} and Eggarter, {T. P.}",

year = "1970",

doi = "10.1103/PhysRevLett.25.520",

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AU - Kirkpatrick, S.

AU - Cohen, Morrel H.

AU - Eggarter, T. P.

PY - 1970

Y1 - 1970

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AB - A criterion for localization of electron states in disordered materials is presented. Applications to binary alloys, made using the self-energy calculated in the coherent-potential approximation, confirm the Mott-Cohen-Fritzsche-Ovshinsky model in detail. Mobility edges occur inside the band edges. A mobility gap can appear within the band. The band can split into sub-bands, each with mobility edges. Below a critical concentration, an Anderson transition, where the minority sub-band becomes entirely localized, can occur.

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Localization in disordered materials: Binary alloys

Abstract

All Science Journal Classification (ASJC) codes

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