Localization in disordered materials: Binary alloys

E. N. Economou, S. Kirkpatrick, Morrel H. Cohen, T. P. Eggarter

Research output: Contribution to journalArticlepeer-review

65 Scopus citations

Abstract

A criterion for localization of electron states in disordered materials is presented. Applications to binary alloys, made using the self-energy calculated in the coherent-potential approximation, confirm the Mott-Cohen-Fritzsche-Ovshinsky model in detail. Mobility edges occur inside the band edges. A mobility gap can appear within the band. The band can split into sub-bands, each with mobility edges. Below a critical concentration, an Anderson transition, where the minority sub-band becomes entirely localized, can occur.

Original languageEnglish (US)
Pages (from-to)520-524
Number of pages5
JournalPhysical review letters
Volume25
Issue number8
DOIs
StatePublished - 1970
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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