Localisation in strongly interacting 2D GaAs systems

M. Y. Simmons, A. R. Hamilton, C. E. Yasin, M. Pepper, E. H. Linfield, D. A. Ritchie, K. W. West, L. N. Pfeiffer

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


This paper presents a short review of localisation in strongly interacting, high quality dilute 2D GaAs systems. At zero magnetic field, studies of the temperature dependent resistance of both 2D electron and hole systems show a transition from insulating to metallic behaviour with increasing carrier density. However, careful examination of the 2D hole systems reveal the presence of localising quantum corrections to the conductivity which persist down to the lowest measurement temperatures. Our results highlight the importance of avoiding electron/hole heating at low temperatures and argue against the existence of a 2D metallic phase at B = 0.

Original languageEnglish (US)
Pages (from-to)81-87
Number of pages7
JournalPhysica Status Solidi (B) Basic Research
Issue number1
StatePublished - 2002
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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