LOCAL FIELDS IN GROUP IV SEMICONDUCTORS, MgO AND NaCl.

A. Baldereschi; Roberto Car; E. Tosatti

LOCAL FIELDS IN GROUP IV SEMICONDUCTORS, MgO AND NaCl.

A. Baldereschi
, Roberto Car
, E. Tosatti

Research output: Contribution to conference › Paper › peer-review

Abstract

The microscopic electronic polarization induced by a spatially constant external field is calculated from the dielectric matrices of diamond, Si, Ge, alpha -Sn, MgO and NaCl. Local fields and polarization charges are analyzed in real space. The results show that strong electric dipoles are induced at the bond sites in group IV semiconductors, and on the anions in MgO and NaCl.

Original language	English (US)
Pages	1207-1210
Number of pages	4
State	Published - 1979
Event	Pap from the Int Conf on the Phys of Semicond, 14th - Edinburgh, Scotl Duration: Sep 4 1978 → Sep 8 1978

Other

Other	Pap from the Int Conf on the Phys of Semicond, 14th
City	Edinburgh, Scotl
Period	9/4/78 → 9/8/78

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

@conference{27c4d98758fe47aa95bc096350d51244,

title = "LOCAL FIELDS IN GROUP IV SEMICONDUCTORS, MgO AND NaCl.",

abstract = "The microscopic electronic polarization induced by a spatially constant external field is calculated from the dielectric matrices of diamond, Si, Ge, alpha -Sn, MgO and NaCl. Local fields and polarization charges are analyzed in real space. The results show that strong electric dipoles are induced at the bond sites in group IV semiconductors, and on the anions in MgO and NaCl.",

author = "A. Baldereschi and Roberto Car and E. Tosatti",

year = "1979",

language = "English (US)",

pages = "1207--1210",

note = "Pap from the Int Conf on the Phys of Semicond, 14th ; Conference date: 04-09-1978 Through 08-09-1978",

}

TY - CONF

T1 - LOCAL FIELDS IN GROUP IV SEMICONDUCTORS, MgO AND NaCl.

AU - Baldereschi, A.

AU - Car, Roberto

AU - Tosatti, E.

PY - 1979

Y1 - 1979

N2 - The microscopic electronic polarization induced by a spatially constant external field is calculated from the dielectric matrices of diamond, Si, Ge, alpha -Sn, MgO and NaCl. Local fields and polarization charges are analyzed in real space. The results show that strong electric dipoles are induced at the bond sites in group IV semiconductors, and on the anions in MgO and NaCl.

AB - The microscopic electronic polarization induced by a spatially constant external field is calculated from the dielectric matrices of diamond, Si, Ge, alpha -Sn, MgO and NaCl. Local fields and polarization charges are analyzed in real space. The results show that strong electric dipoles are induced at the bond sites in group IV semiconductors, and on the anions in MgO and NaCl.

UR - https://www.scopus.com/pages/publications/0018307402

UR - https://www.scopus.com/pages/publications/0018307402#tab=citedBy

M3 - Paper

AN - SCOPUS:0018307402

SP - 1207

EP - 1210

T2 - Pap from the Int Conf on the Phys of Semicond, 14th

Y2 - 4 September 1978 through 8 September 1978

ER -

LOCAL FIELDS IN GROUP IV SEMICONDUCTORS, MgO AND NaCl.

Abstract

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All Science Journal Classification (ASJC) codes

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