Abstract
The microscopic electronic polarization induced by a spatially constant external field is calculated from the dielectric matrices of diamond, Si, Ge, alpha -Sn, MgO and NaCl. Local fields and polarization charges are analyzed in real space. The results show that strong electric dipoles are induced at the bond sites in group IV semiconductors, and on the anions in MgO and NaCl.
| Original language | English (US) |
|---|---|
| Pages | 1207-1210 |
| Number of pages | 4 |
| State | Published - 1979 |
| Event | Pap from the Int Conf on the Phys of Semicond, 14th - Edinburgh, Scotl Duration: Sep 4 1978 → Sep 8 1978 |
Other
| Other | Pap from the Int Conf on the Phys of Semicond, 14th |
|---|---|
| City | Edinburgh, Scotl |
| Period | 9/4/78 → 9/8/78 |
All Science Journal Classification (ASJC) codes
- General Engineering