A model inverse dielectric matrix is used to calculate the electronic response to impurity potentials in silicon. We show that local-field effects are strong on the scale of interatomic distances and that they give rise to relevant quantitative effects on the binding energies and wave functions of both deep and shallow impurities.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physical review letters|
|State||Published - Jan 1 1979|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)