Local-field effects in the screening of impurities in silicon

R. Car; Annabella Selloni

doi:10.1103/PhysRevLett.42.1365

Local-field effects in the screening of impurities in silicon

R. Car, Annabella Selloni

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

A model inverse dielectric matrix is used to calculate the electronic response to impurity potentials in silicon. We show that local-field effects are strong on the scale of interatomic distances and that they give rise to relevant quantitative effects on the binding energies and wave functions of both deep and shallow impurities.

Original language	English (US)
Pages (from-to)	1365-1368
Number of pages	4
Journal	Physical review letters
Volume	42
Issue number	20
DOIs	https://doi.org/10.1103/PhysRevLett.42.1365
State	Published - 1979
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Access to Document

10.1103/PhysRevLett.42.1365

Cite this

@article{7507c646ad90466e8bcff460a0b7ca86,

title = "Local-field effects in the screening of impurities in silicon",

abstract = "A model inverse dielectric matrix is used to calculate the electronic response to impurity potentials in silicon. We show that local-field effects are strong on the scale of interatomic distances and that they give rise to relevant quantitative effects on the binding energies and wave functions of both deep and shallow impurities.",

author = "R. Car and Annabella Selloni",

year = "1979",

doi = "10.1103/PhysRevLett.42.1365",

language = "English (US)",

volume = "42",

pages = "1365--1368",

journal = "Physical review letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "20",

}

TY - JOUR

T1 - Local-field effects in the screening of impurities in silicon

AU - Car, R.

AU - Selloni, Annabella

PY - 1979

Y1 - 1979

N2 - A model inverse dielectric matrix is used to calculate the electronic response to impurity potentials in silicon. We show that local-field effects are strong on the scale of interatomic distances and that they give rise to relevant quantitative effects on the binding energies and wave functions of both deep and shallow impurities.

AB - A model inverse dielectric matrix is used to calculate the electronic response to impurity potentials in silicon. We show that local-field effects are strong on the scale of interatomic distances and that they give rise to relevant quantitative effects on the binding energies and wave functions of both deep and shallow impurities.

UR - http://www.scopus.com/inward/record.url?scp=14344272014&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=14344272014&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.42.1365

DO - 10.1103/PhysRevLett.42.1365

M3 - Article

AN - SCOPUS:14344272014

SN - 0031-9007

VL - 42

SP - 1365

EP - 1368

JO - Physical review letters

JF - Physical review letters

IS - 20

ER -

Local-field effects in the screening of impurities in silicon

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this