Local-field effects in the screening of impurities in silicon

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Abstract

A model inverse dielectric matrix is used to calculate the electronic response to impurity potentials in silicon. We show that local-field effects are strong on the scale of interatomic distances and that they give rise to relevant quantitative effects on the binding energies and wave functions of both deep and shallow impurities.

Original languageEnglish (US)
Pages (from-to)1365-1368
Number of pages4
JournalPhysical review letters
Volume42
Issue number20
DOIs
StatePublished - Jan 1 1979
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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