Abstract
The electronic response to impurity potentials in silicon is calculated in real space by using a simple model for the inverse dielectric matrix. Both substitutional and interstitial point charge impurities are considered. The screened potential exhibits strong site dependence and directional character. These effects mostly occur on the scale of the interatomic distance and are interpreted in terms of bond charge polarization.
Original language | English (US) |
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Pages | 407-410 |
Number of pages | 4 |
State | Published - 1979 |
Event | Pap from the Int Conf on the Phys of Semicond, 14th - Edinburgh, Scotl Duration: Sep 4 1978 → Sep 8 1978 |
Other
Other | Pap from the Int Conf on the Phys of Semicond, 14th |
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City | Edinburgh, Scotl |
Period | 9/4/78 → 9/8/78 |
All Science Journal Classification (ASJC) codes
- General Engineering