LOCAL FIELD EFFECTS IN THE SCREENING OF A POINT CHARGE IMPURITY IN SILICON.

Research output: Contribution to conferencePaper

1 Scopus citations

Abstract

The electronic response to impurity potentials in silicon is calculated in real space by using a simple model for the inverse dielectric matrix. Both substitutional and interstitial point charge impurities are considered. The screened potential exhibits strong site dependence and directional character. These effects mostly occur on the scale of the interatomic distance and are interpreted in terms of bond charge polarization.

Original languageEnglish (US)
Pages407-410
Number of pages4
StatePublished - Jan 1 1979
EventPap from the Int Conf on the Phys of Semicond, 14th - Edinburgh, Scotl
Duration: Sep 4 1978Sep 8 1978

Other

OtherPap from the Int Conf on the Phys of Semicond, 14th
CityEdinburgh, Scotl
Period9/4/789/8/78

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'LOCAL FIELD EFFECTS IN THE SCREENING OF A POINT CHARGE IMPURITY IN SILICON.'. Together they form a unique fingerprint.

  • Cite this

    Car, R., & Selloni, A. (1979). LOCAL FIELD EFFECTS IN THE SCREENING OF A POINT CHARGE IMPURITY IN SILICON.. 407-410. Paper presented at Pap from the Int Conf on the Phys of Semicond, 14th, Edinburgh, Scotl, .