Local field corrections to binding energies of substitutional and interstitial donors in Si and Ge

R. Car, Annabella Selloni, M. Altarelli

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

Intervalley Umklapp matrix elements, with inclusion of local field screening effects, are computed for substitutional and interstitial point-charge impurity potentials in Si and Ge. The shallow character of substitutional donors is not affected in Ge and is even reinforced in Si, where a 20% reduction of the binding energy is obtained as a consequence of the local field effect. In both semiconductors the local field corrections strongly reinforce the non-effective-mass, deep-level character of interstitial point-charge donors.

Original languageEnglish (US)
Pages (from-to)1013-1016
Number of pages4
JournalSolid State Communications
Volume39
Issue number9
DOIs
StatePublished - Sep 1981
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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