Local Electronic Properties of Coherent Single-Layer WS2/WSe2Lateral Heterostructures

Charlotte Herbig, Canxun Zhang, Fauzia Mujid, Saien Xie, Zahra Pedramrazi, Jiwoong Park, Michael F. Crommie

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Lateral single-layer transition metal dichalcogenide (TMD) heterostructures are promising building blocks for future ultrathin devices. Recent advances in the growth of coherent heterostructures have improved the structural precision of lateral heterojunctions, but an understanding of the electronic effects of the chemical transition at the interface and associated strain is lacking. Here we present a scanning tunneling microscopy study of single-layer coherent TMD heterostructures with nearly uniform strain on each side of the heterojunction interface. We have characterized the local topography and electronic structure of single-layer WS2/WSe2 heterojunctions exhibiting ultrasharp coherent interfaces. Uniform built-in strain on each side of the interface arising from lattice mismatch results in a reduction of the bandgap of WS2. By mapping the tunneling differential conductance across the interface, we find type-II band alignment and an ultranarrow electronic transition region only ∼3 nm in width that arises from wave function mixing between the two materials.

Original languageEnglish (US)
Pages (from-to)2363-2369
Number of pages7
JournalNano Letters
Volume21
Issue number6
DOIs
StatePublished - Mar 24 2021
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Keywords

  • Transition metal dichalcogenides
  • scanning tunneling microscopy
  • semiconductor heterostructures
  • strain engineering
  • wave function hybridization

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