LnPdSb and Ln3Au3Sb4: new thermoelectric materials

K. Mastronardi; D. Young; C. C. Wang; A. P. Ramirez; P. Khalifah; R. J. Cava

LnPdSb and Ln₃Au₃Sb₄: new thermoelectric materials

K. Mastronardi, D. Young, C. C. Wang, A. P. Ramirez, P. Khalifah, R. J. Cava

Research output: Contribution to journal › Conference article › peer-review

Abstract

The thermoelectric properties near ambient temperature of half-Heusler alloys based on HoPdSb, DyPdSb, and ErPdSb are reported. The Seebeck coefficients are between 60 and 250 μV/K. The resistivities range between 0.6 and 20 mωcm, and the majority carriers are p-type. Thermal conductivities are smallest in intentionally disordered materials. The highest ambient temperature ZT obtained is 0.06. Band structure calculations are presented, and are compared to those for ZrNiSn. It is suggested that half-Heusler alloys with 18 electrons per formula unit may represent a large class of thermoelectric materials. The thermoelectric properties of another family of cubic symmetry antimonides, based on Ho₃Au₃Sb₄ and Sm₃Au₃Sb₄, are also reported.

Original language	English (US)
Pages (from-to)	59-64
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	545
State	Published - 1999
Event	Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA Duration: Nov 30 1998 → Dec 3 1998

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{4cd993a5a127431c8b49cd087579ce52,

title = "LnPdSb and Ln3Au3Sb4: new thermoelectric materials",

abstract = "The thermoelectric properties near ambient temperature of half-Heusler alloys based on HoPdSb, DyPdSb, and ErPdSb are reported. The Seebeck coefficients are between 60 and 250 μV/K. The resistivities range between 0.6 and 20 mωcm, and the majority carriers are p-type. Thermal conductivities are smallest in intentionally disordered materials. The highest ambient temperature ZT obtained is 0.06. Band structure calculations are presented, and are compared to those for ZrNiSn. It is suggested that half-Heusler alloys with 18 electrons per formula unit may represent a large class of thermoelectric materials. The thermoelectric properties of another family of cubic symmetry antimonides, based on Ho3Au3Sb4 and Sm3Au3Sb4, are also reported.",

author = "K. Mastronardi and D. Young and Wang, {C. C.} and Ramirez, {A. P.} and P. Khalifah and Cava, {R. J.}",

year = "1999",

language = "English (US)",

volume = "545",

pages = "59--64",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' ; Conference date: 30-11-1998 Through 03-12-1998",

}

TY - JOUR

T1 - LnPdSb and Ln3Au3Sb4

T2 - Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998'

AU - Mastronardi, K.

AU - Young, D.

AU - Wang, C. C.

AU - Ramirez, A. P.

AU - Khalifah, P.

AU - Cava, R. J.

PY - 1999

Y1 - 1999

N2 - The thermoelectric properties near ambient temperature of half-Heusler alloys based on HoPdSb, DyPdSb, and ErPdSb are reported. The Seebeck coefficients are between 60 and 250 μV/K. The resistivities range between 0.6 and 20 mωcm, and the majority carriers are p-type. Thermal conductivities are smallest in intentionally disordered materials. The highest ambient temperature ZT obtained is 0.06. Band structure calculations are presented, and are compared to those for ZrNiSn. It is suggested that half-Heusler alloys with 18 electrons per formula unit may represent a large class of thermoelectric materials. The thermoelectric properties of another family of cubic symmetry antimonides, based on Ho3Au3Sb4 and Sm3Au3Sb4, are also reported.

AB - The thermoelectric properties near ambient temperature of half-Heusler alloys based on HoPdSb, DyPdSb, and ErPdSb are reported. The Seebeck coefficients are between 60 and 250 μV/K. The resistivities range between 0.6 and 20 mωcm, and the majority carriers are p-type. Thermal conductivities are smallest in intentionally disordered materials. The highest ambient temperature ZT obtained is 0.06. Band structure calculations are presented, and are compared to those for ZrNiSn. It is suggested that half-Heusler alloys with 18 electrons per formula unit may represent a large class of thermoelectric materials. The thermoelectric properties of another family of cubic symmetry antimonides, based on Ho3Au3Sb4 and Sm3Au3Sb4, are also reported.

UR - http://www.scopus.com/inward/record.url?scp=0032591256&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032591256&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032591256

SN - 0272-9172

VL - 545

SP - 59

EP - 64

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

Y2 - 30 November 1998 through 3 December 1998

ER -

LnPdSb and Ln₃Au₃Sb₄: new thermoelectric materials

Abstract

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this