Oxide crystallographic shear structures have been found to be good hosts for the insertion of lithium at ambient temperature. We have been particularly interested in compounds based on (H)-Nb2O5 and Tungsten-Vanadium oxides. In this report we characterize the conductivities and lithium insertion reactions of several such compounds, and explore the effects of metal atom substitutions in the host on those properties.
All Science Journal Classification (ASJC) codes
- General Chemistry
- General Materials Science
- Condensed Matter Physics