Linear temperature dependence of the conductivity in Si two-dimensional electrons near the apparent metal-to-insulator transition

K. Lai, W. Pan, D. C. Tsui, S. Lyon, M. Mühlberger, F. Schäffler

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Abstract

In a high mobility two-dimensional electron system in Si, near the critical density, nc =0.32× 1011 cm-2, of the apparent metal-to-insulator transition, the conductivity displays a linear temperature (T) dependence around the Fermi temperature. When σ0, the extrapolated T=0 conductivity from the linear T dependence, is plotted as a function of density, two regimes with different σ0 (n) relations are seen, suggestive of two different phases. Interestingly, a sharp transition between these two regimes coincides with nc, and σ0 of the transition is ∼ e2 /h, the quantum conductance, per square. Toward T=0, the data deviate from linear σ(T) relation and we discuss the possible percolation type of transition in our Si sample.

Original languageEnglish (US)
Article number033314
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume75
Issue number3
DOIs
StatePublished - Jan 29 2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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