TY - JOUR
T1 - Linear temperature dependence of the conductivity in Si two-dimensional electrons near the apparent metal-to-insulator transition
AU - Lai, K.
AU - Pan, W.
AU - Tsui, D. C.
AU - Lyon, S.
AU - Mühlberger, M.
AU - Schäffler, F.
PY - 2007
Y1 - 2007
N2 - In a high mobility two-dimensional electron system in Si, near the critical density, nc =0.32× 1011 cm-2, of the apparent metal-to-insulator transition, the conductivity displays a linear temperature (T) dependence around the Fermi temperature. When σ0, the extrapolated T=0 conductivity from the linear T dependence, is plotted as a function of density, two regimes with different σ0 (n) relations are seen, suggestive of two different phases. Interestingly, a sharp transition between these two regimes coincides with nc, and σ0 of the transition is ∼ e2 /h, the quantum conductance, per square. Toward T=0, the data deviate from linear σ(T) relation and we discuss the possible percolation type of transition in our Si sample.
AB - In a high mobility two-dimensional electron system in Si, near the critical density, nc =0.32× 1011 cm-2, of the apparent metal-to-insulator transition, the conductivity displays a linear temperature (T) dependence around the Fermi temperature. When σ0, the extrapolated T=0 conductivity from the linear T dependence, is plotted as a function of density, two regimes with different σ0 (n) relations are seen, suggestive of two different phases. Interestingly, a sharp transition between these two regimes coincides with nc, and σ0 of the transition is ∼ e2 /h, the quantum conductance, per square. Toward T=0, the data deviate from linear σ(T) relation and we discuss the possible percolation type of transition in our Si sample.
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U2 - 10.1103/PhysRevB.75.033314
DO - 10.1103/PhysRevB.75.033314
M3 - Article
AN - SCOPUS:33846452509
SN - 1098-0121
VL - 75
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 3
M1 - 033314
ER -