Linear temperature dependence of conductivity in the apparent insulating regime of dilute two-dimensional holes in GaAs

Hwayong Noh; M. P. Lilly; D. C. Tsui; J. A. Simmons; L. N. Pfeiffer; K. W. West

doi:10.1103/PhysRevB.68.241308

Linear temperature dependence of conductivity in the apparent insulating regime of dilute two-dimensional holes in GaAs

Hwayong Noh
, M. P. Lilly
, D. C. Tsui
, J. A. Simmons
, L. N. Pfeiffer
, K. W. West

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

The conductivity of extremely high mobility dilute two-dimensional holes in GaAs changes linearly with temperature in the insulating side of the metal-insulator transition. Hopping conduction, characterized by an exponentially decreasing conductivity with decreasing temperature, is not observed when the conductivity is smaller than e²/h. We suggest that strong interactions in a regime close to the Wigner crystallization must be playing a role in the unusual transport.

Original language	English (US)
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	68
Issue number	24
DOIs	https://doi.org/10.1103/PhysRevB.68.241308
State	Published - Dec 23 2003
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.68.241308

Cite this

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abstract = "The conductivity of extremely high mobility dilute two-dimensional holes in GaAs changes linearly with temperature in the insulating side of the metal-insulator transition. Hopping conduction, characterized by an exponentially decreasing conductivity with decreasing temperature, is not observed when the conductivity is smaller than e2/h. We suggest that strong interactions in a regime close to the Wigner crystallization must be playing a role in the unusual transport.",

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doi = "10.1103/PhysRevB.68.241308",

language = "English (US)",

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AU - Noh, Hwayong

AU - Lilly, M. P.

AU - Tsui, D. C.

AU - Simmons, J. A.

AU - Pfeiffer, L. N.

AU - West, K. W.

PY - 2003/12/23

Y1 - 2003/12/23

N2 - The conductivity of extremely high mobility dilute two-dimensional holes in GaAs changes linearly with temperature in the insulating side of the metal-insulator transition. Hopping conduction, characterized by an exponentially decreasing conductivity with decreasing temperature, is not observed when the conductivity is smaller than e2/h. We suggest that strong interactions in a regime close to the Wigner crystallization must be playing a role in the unusual transport.

AB - The conductivity of extremely high mobility dilute two-dimensional holes in GaAs changes linearly with temperature in the insulating side of the metal-insulator transition. Hopping conduction, characterized by an exponentially decreasing conductivity with decreasing temperature, is not observed when the conductivity is smaller than e2/h. We suggest that strong interactions in a regime close to the Wigner crystallization must be playing a role in the unusual transport.

UR - https://www.scopus.com/pages/publications/1042299910

UR - https://www.scopus.com/pages/publications/1042299910#tab=citedBy

U2 - 10.1103/PhysRevB.68.241308

DO - 10.1103/PhysRevB.68.241308

M3 - Article

AN - SCOPUS:1042299910

SN - 1098-0121

VL - 68

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 24

ER -

Linear temperature dependence of conductivity in the apparent insulating regime of dilute two-dimensional holes in GaAs

Abstract

All Science Journal Classification (ASJC) codes

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