@inproceedings{41b15458a5bf4bfca5c8caf68813aba7,
title = "LIMITED REACTION PROCESSING OF SILICON: OXIDATION AND EPITAXY.",
abstract = "Limited reaction processing has been used to grow thin, high quality layers of epitaxial silicon, silicon dioxide, and polycrystalline silicon. Multiple layers of these materials were deposited in-situ to demonstrate control of layer thicknesses, interface transition regions, and interface cleanliness. MOS and p-n junction structures were fabricated which exhibit electrical characteristics comparable to those of devices produced by conventional techniques.",
author = "Gronet, \{C. M.\} and Sturm, \{J. C.\} and Williams, \{K. E.\} and Gibbons, \{J. F.\}",
year = "1986",
language = "English (US)",
isbn = "0931837170",
series = "Materials Research Society Symposia Proceedings",
publisher = "Materials Research Soc",
pages = "305--312",
editor = "Sedgwick, \{Thomas O.\} and Seidel, \{Thomas E.\} and Bor-Yeu Tsaur",
booktitle = "Materials Research Society Symposia Proceedings",
}