Abstract
Limited reaction processing has been used to grow thin, high quality layers of epitaxial silicon, silicon dioxide, and polycrystalline silicon. Multiple layers of these materials were deposited in-situ to demonstrate control of layer thicknesses, interface transition regions, and interface cleanliness. MOS and p-n junction structures were fabricated which exhibit electrical characteristics comparable to those of devices produced by conventional techniques.
Original language | English (US) |
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Title of host publication | Materials Research Society Symposia Proceedings |
Editors | Thomas O. Sedgwick, Thomas E. Seidel, Bor-Yeu Tsaur |
Publisher | Materials Research Soc |
Pages | 305-312 |
Number of pages | 8 |
Volume | 52 |
ISBN (Print) | 0931837170 |
State | Published - Dec 1 1986 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering