LIMITED REACTION PROCESSING OF SILICON: OXIDATION AND EPITAXY.

C. M. Gronet, James Christopher Sturm, K. E. Williams, J. F. Gibbons

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Limited reaction processing has been used to grow thin, high quality layers of epitaxial silicon, silicon dioxide, and polycrystalline silicon. Multiple layers of these materials were deposited in-situ to demonstrate control of layer thicknesses, interface transition regions, and interface cleanliness. MOS and p-n junction structures were fabricated which exhibit electrical characteristics comparable to those of devices produced by conventional techniques.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsThomas O. Sedgwick, Thomas E. Seidel, Bor-Yeu Tsaur
PublisherMaterials Research Soc
Pages305-312
Number of pages8
Volume52
ISBN (Print)0931837170
StatePublished - Dec 1 1986
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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