LIMITED REACTION PROCESSING OF SILICON: OXIDATION AND EPITAXY.

C. M. Gronet; James Christopher Sturm; K. E. Williams; J. F. Gibbons

LIMITED REACTION PROCESSING OF SILICON: OXIDATION AND EPITAXY.

C. M. Gronet, James Christopher Sturm, K. E. Williams, J. F. Gibbons

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Limited reaction processing has been used to grow thin, high quality layers of epitaxial silicon, silicon dioxide, and polycrystalline silicon. Multiple layers of these materials were deposited in-situ to demonstrate control of layer thicknesses, interface transition regions, and interface cleanliness. MOS and p-n junction structures were fabricated which exhibit electrical characteristics comparable to those of devices produced by conventional techniques.

Original language	English (US)
Title of host publication	Materials Research Society Symposia Proceedings
Editors	Thomas O. Sedgwick, Thomas E. Seidel, Bor-Yeu Tsaur
Publisher	Materials Research Soc
Pages	305-312
Number of pages	8
Volume	52
ISBN (Print)	0931837170
State	Published - Dec 1 1986
Externally published	Yes

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "LIMITED REACTION PROCESSING OF SILICON: OXIDATION AND EPITAXY.",

abstract = "Limited reaction processing has been used to grow thin, high quality layers of epitaxial silicon, silicon dioxide, and polycrystalline silicon. Multiple layers of these materials were deposited in-situ to demonstrate control of layer thicknesses, interface transition regions, and interface cleanliness. MOS and p-n junction structures were fabricated which exhibit electrical characteristics comparable to those of devices produced by conventional techniques.",

author = "Gronet, {C. M.} and Sturm, {James Christopher} and Williams, {K. E.} and Gibbons, {J. F.}",

year = "1986",

month = dec,

day = "1",

language = "English (US)",

isbn = "0931837170",

volume = "52",

pages = "305--312",

editor = "Sedgwick, {Thomas O.} and Seidel, {Thomas E.} and Bor-Yeu Tsaur",

booktitle = "Materials Research Society Symposia Proceedings",

publisher = "Materials Research Soc",

}

LIMITED REACTION PROCESSING OF SILICON : OXIDATION AND EPITAXY. / Gronet, C. M.; Sturm, James Christopher; Williams, K. E. et al.

Materials Research Society Symposia Proceedings. ed. / Thomas O. Sedgwick; Thomas E. Seidel; Bor-Yeu Tsaur. Vol. 52 Materials Research Soc, 1986. p. 305-312.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - LIMITED REACTION PROCESSING OF SILICON

T2 - OXIDATION AND EPITAXY.

AU - Gronet, C. M.

AU - Sturm, James Christopher

AU - Williams, K. E.

AU - Gibbons, J. F.

PY - 1986/12/1

Y1 - 1986/12/1

N2 - Limited reaction processing has been used to grow thin, high quality layers of epitaxial silicon, silicon dioxide, and polycrystalline silicon. Multiple layers of these materials were deposited in-situ to demonstrate control of layer thicknesses, interface transition regions, and interface cleanliness. MOS and p-n junction structures were fabricated which exhibit electrical characteristics comparable to those of devices produced by conventional techniques.

AB - Limited reaction processing has been used to grow thin, high quality layers of epitaxial silicon, silicon dioxide, and polycrystalline silicon. Multiple layers of these materials were deposited in-situ to demonstrate control of layer thicknesses, interface transition regions, and interface cleanliness. MOS and p-n junction structures were fabricated which exhibit electrical characteristics comparable to those of devices produced by conventional techniques.

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UR - http://www.scopus.com/inward/citedby.url?scp=0023018666&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0023018666

SN - 0931837170

VL - 52

SP - 305

EP - 312

BT - Materials Research Society Symposia Proceedings

A2 - Sedgwick, Thomas O.

A2 - Seidel, Thomas E.

A2 - Tsaur, Bor-Yeu

PB - Materials Research Soc

ER -

LIMITED REACTION PROCESSING OF SILICON: OXIDATION AND EPITAXY.

Abstract

All Science Journal Classification (ASJC) codes

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