LIMITED REACTION PROCESSING: IN-SITU METAL-OXIDE-SEMICONDUCTOR CAPACITORS.

J. C. Sturm, C. M. Gronet, J. F. Gibbons

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

Limited reaction processing has been used to fabricate in-situ silicon-silicon dioxide-polycrystalline silicon layers for metal-oxide-semiconductor (MOS) capacitors. The process consists of multiple in-situ rapid thermal processing steps to grow or deposit different layers. Capacitors have been fabricated from these layers and analyzed by capacitance-voltage measurements for interfacial fixed charge and interface state density. The capacitors exhibit excellent characteristics.

Original languageEnglish (US)
Pages (from-to)282-284
Number of pages3
JournalElectron device letters
VolumeEDL-7
Issue number5
DOIs
StatePublished - 1986
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'LIMITED REACTION PROCESSING: IN-SITU METAL-OXIDE-SEMICONDUCTOR CAPACITORS.'. Together they form a unique fingerprint.

  • Cite this