Light scattering from electrons in semiconductor microstructures. Two-dimensional electron gas

A. Pinczuk, D. Heiman, J. P. Valladares, L. N. Pfeiffer, K. W. West

Research output: Contribution to journalConference articlepeer-review

Abstract

We present a review of our recent resonant inelastic light scattering research of the ultra-high mobility two-dimensional electron gas in GaAs quantum wells. Spectroscopy of intersubband excitations shows that exchange interactions are larger than previously anticipated. Light scattering by large wavevector inter-Landau-level excitations displays the excitonic binding and roton minima in the mode dispersions that are predicted by Hartree-Fock theories.

Original languageEnglish (US)
Pages (from-to)2-12
Number of pages11
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume1336
StatePublished - 1990
Externally publishedYes
EventRaman and Luminescence Spectroscopies in Technology II - San Diego, CA, USA
Duration: Jul 10 1990Jul 12 1990

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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