Abstract
Resonant inelastic light-scattering techniques have been used to measure directly the single-particle tunneling gap (ΔSAS) in AlxGa1-xAs/GaAs double quantum wells. We have observed a systematic decrease in ΔSAS with increasing height of the barrier in agreement with the ΔSAS calculated self-consistently within a Hartree approximation.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 291-293 |
| Number of pages | 3 |
| Journal | Solid-State Electronics |
| Volume | 40 |
| Issue number | 1-8 |
| DOIs | |
| State | Published - 1996 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry