Light emission from hot carriers in Si MOSFETS

K. Hublitz, S. A. Lyon

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

Visible light emission from short-channel silicon MOSFETS biased deep into saturation is studied. A group of peaks is observed in the range of 1.3 to 2.3 eV. Devices from different manufacturers are all found to have similar luminescence features. Neither of the current models for light emission from MOSFETs, electron-hole pair recombination and bremsstrahlung emission, appears to be able to explain the observed spectra. The authors suggest that the luminescence arises from radiative transitions between conduction bands in the silicon.

Original languageEnglish (US)
Article number149
Pages (from-to)B567-B569
JournalSemiconductor Science and Technology
Volume7
Issue number3 B
DOIs
StatePublished - Dec 1 1992

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Light emission from hot carriers in Si MOSFETS'. Together they form a unique fingerprint.

  • Cite this