Lessons learned from BaBar silicon vertex tracker, limits, and future perspectives of the detector

V. Re; D. Kirkby; M. Bruinsma; S. Curry; J. Berryhill; S. Burke; D. Callahan; C. Campagnari; B. Dahmes; D. Hale; P. Hart; S. Kyre; S. Levy; O. Long; M. Mazur; J. Richman; J. Stoner; W. Verkerke; T. Beck; A. M. Eisner; J. Kroseberg; W. S. Lockman; G. Nesom; A. Seiden; P. Spradlin; W. Walkowiak; M. Wilson; C. Bozzi; G. Cibinetto; L. Piemontese; H. L. Snoek; D. Brown; E. Charles; S. Dardin; F. Goozen; L. T. Kerth; A. Gritsan; G. Lynch; N. A. Roe; C. Chen; C. K. Lae; W. Hulsbergen; V. Lillard; D. Roberts; A. Lazzaro; F. Palombo; L. Ratti; P. F. Manfredi; E. Mandelli; C. Angelini; G. Batignani; S. Bettarini; M. Bondioli; F. Bosi; F. Bucci; G. Calderini; M. Carpinelli; M. Ceccanti; F. Forti; M. A. Giorgi; A. Lusiani; P. Mammini; G. Marchiori; M. Morganti; F. Morsani; N. Neri; E. Paoloni; A. Profeti; M. Rama; G. Rizzo; G. Simi; J. Walsh; P. Elmer; A. Perazzo; P. Burchat; A. Edwards; S. Majewski; B. A. Petersen; C. Roat; M. Bona; F. Bianchi; D. Gamba; P. Trapani; L. Bosisio; C. Cartaro; F. Cossuti; G. Della Ricca; S. Dittongo; S. Grancagnolo; L. Lanceri; L. Vitale; M. Datta; A. Mihalyi

doi:10.1109/TNS.2005.850982

Lessons learned from BaBar silicon vertex tracker, limits, and future perspectives of the detector

V. Re, D. Kirkby, M. Bruinsma, S. Curry, J. Berryhill, S. Burke, D. Callahan, C. Campagnari, B. Dahmes, D. Hale, P. Hart, S. Kyre, S. Levy, O. Long, M. Mazur, J. Richman, J. Stoner, W. Verkerke, T. Beck, A. M. EisnerJ. Kroseberg, W. S. Lockman, G. Nesom, A. Seiden, P. Spradlin, W. Walkowiak, M. Wilson, C. Bozzi, G. Cibinetto, L. Piemontese, H. L. Snoek, D. Brown, E. Charles, S. Dardin, F. Goozen, L. T. Kerth, A. Gritsan, G. Lynch, N. A. Roe, C. Chen, C. K. Lae, W. Hulsbergen, V. Lillard, D. Roberts, A. Lazzaro, F. Palombo, L. Ratti, P. F. Manfredi, E. Mandelli, C. Angelini, G. Batignani, S. Bettarini, M. Bondioli, F. Bosi, F. Bucci, G. Calderini, M. Carpinelli, M. Ceccanti, F. Forti, M. A. Giorgi, A. Lusiani, P. Mammini, G. Marchiori, M. Morganti, F. Morsani, N. Neri, E. Paoloni, A. Profeti, M. Rama, G. Rizzo, G. Simi, J. Walsh, P. Elmer, A. Perazzo, P. Burchat, A. Edwards, S. Majewski, B. A. Petersen, C. Roat, M. Bona, F. Bianchi, D. Gamba, P. Trapani, L. Bosisio, C. Cartaro, F. Cossuti, G. Della Ricca, S. Dittongo, S. Grancagnolo, L. Lanceri, L. Vitale, M. Datta, A. Mihalyi

Physics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The silicon vertex tracker (SVT) of the BaBar experiment at PEP-II is described. This is the crucial device for the measurement of the B meson decay vertices to extract charge-conjugation parity (CP) asymmetries. It consists of five layers of double-sided ac-coupled silicon strip detectors, read out by a full-custom integrated circuit, capable of simultaneous acquisition, digitization, and transmission of data. It represents the core of the BaBar tracking system, providing position measurements with a precision of 10 μm (inner layers) and 30 μm (outer layers). The relevant performances of the SVT are presented, and the experience acquired during the construction, installation, and the first five years of data-taking is described. Innovative solutions are high-lighted, like the sophisticated alignment procedure, imposed by the design of the silicon tracker, integrated in the beamline elements and mechanically separated from the other parts of BaBar. The harshness of the background conditions in the interaction region required several studies on the radiation damage of the sensors and the front-end chips, whose results are presented. Over the next five years the luminosity is predicted to increase by a factor three, leading to radiation and occupancy levels significantly exceeding the detector design. Extrapolation of future radiation doses and occupancies is shown together with the expected detector performance and lifetime. Upgrade scenarios to deal with the increased luminosity and backgrounds are discussed.

Original language	English (US)
Pages (from-to)	787-792
Number of pages	6
Journal	IEEE Transactions on Nuclear Science
Volume	52
Issue number	3 II
DOIs	https://doi.org/10.1109/TNS.2005.850982
State	Published - Jun 2005

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

Keywords

Radiation damage
Silicon detector

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10.1109/TNS.2005.850982

Cite this

Re, V., Kirkby, D., Bruinsma, M., Curry, S., Berryhill, J., Burke, S., Callahan, D., Campagnari, C., Dahmes, B., Hale, D., Hart, P., Kyre, S., Levy, S., Long, O., Mazur, M., Richman, J., Stoner, J., Verkerke, W., Beck, T., ... Mihalyi, A. (2005). Lessons learned from BaBar silicon vertex tracker, limits, and future perspectives of the detector. IEEE Transactions on Nuclear Science, 52(3 II), 787-792. https://doi.org/10.1109/TNS.2005.850982

@article{b9569c4234d24890b0448d66ac4be49e,

title = "Lessons learned from BaBar silicon vertex tracker, limits, and future perspectives of the detector",

abstract = "The silicon vertex tracker (SVT) of the BaBar experiment at PEP-II is described. This is the crucial device for the measurement of the B meson decay vertices to extract charge-conjugation parity (CP) asymmetries. It consists of five layers of double-sided ac-coupled silicon strip detectors, read out by a full-custom integrated circuit, capable of simultaneous acquisition, digitization, and transmission of data. It represents the core of the BaBar tracking system, providing position measurements with a precision of 10 μm (inner layers) and 30 μm (outer layers). The relevant performances of the SVT are presented, and the experience acquired during the construction, installation, and the first five years of data-taking is described. Innovative solutions are high-lighted, like the sophisticated alignment procedure, imposed by the design of the silicon tracker, integrated in the beamline elements and mechanically separated from the other parts of BaBar. The harshness of the background conditions in the interaction region required several studies on the radiation damage of the sensors and the front-end chips, whose results are presented. Over the next five years the luminosity is predicted to increase by a factor three, leading to radiation and occupancy levels significantly exceeding the detector design. Extrapolation of future radiation doses and occupancies is shown together with the expected detector performance and lifetime. Upgrade scenarios to deal with the increased luminosity and backgrounds are discussed.",

keywords = "Radiation damage, Silicon detector",

author = "V. Re and D. Kirkby and M. Bruinsma and S. Curry and J. Berryhill and S. Burke and D. Callahan and C. Campagnari and B. Dahmes and D. Hale and P. Hart and S. Kyre and S. Levy and O. Long and M. Mazur and J. Richman and J. Stoner and W. Verkerke and T. Beck and Eisner, {A. M.} and J. Kroseberg and Lockman, {W. S.} and G. Nesom and A. Seiden and P. Spradlin and W. Walkowiak and M. Wilson and C. Bozzi and G. Cibinetto and L. Piemontese and Snoek, {H. L.} and D. Brown and E. Charles and S. Dardin and F. Goozen and Kerth, {L. T.} and A. Gritsan and G. Lynch and Roe, {N. A.} and C. Chen and Lae, {C. K.} and W. Hulsbergen and V. Lillard and D. Roberts and A. Lazzaro and F. Palombo and L. Ratti and Manfredi, {P. F.} and E. Mandelli and C. Angelini and G. Batignani and S. Bettarini and M. Bondioli and F. Bosi and F. Bucci and G. Calderini and M. Carpinelli and M. Ceccanti and F. Forti and Giorgi, {M. A.} and A. Lusiani and P. Mammini and G. Marchiori and M. Morganti and F. Morsani and N. Neri and E. Paoloni and A. Profeti and M. Rama and G. Rizzo and G. Simi and J. Walsh and P. Elmer and A. Perazzo and P. Burchat and A. Edwards and S. Majewski and Petersen, {B. A.} and C. Roat and M. Bona and F. Bianchi and D. Gamba and P. Trapani and L. Bosisio and C. Cartaro and F. Cossuti and Ricca, {G. Della} and S. Dittongo and S. Grancagnolo and L. Lanceri and L. Vitale and M. Datta and A. Mihalyi",

year = "2005",

month = jun,

doi = "10.1109/TNS.2005.850982",

language = "English (US)",

volume = "52",

pages = "787--792",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3 II",

}

Re, V, Kirkby, D, Bruinsma, M, Curry, S, Berryhill, J, Burke, S, Callahan, D, Campagnari, C, Dahmes, B, Hale, D, Hart, P, Kyre, S, Levy, S, Long, O, Mazur, M, Richman, J, Stoner, J, Verkerke, W, Beck, T, Eisner, AM, Kroseberg, J, Lockman, WS, Nesom, G, Seiden, A, Spradlin, P, Walkowiak, W, Wilson, M, Bozzi, C, Cibinetto, G, Piemontese, L, Snoek, HL, Brown, D, Charles, E, Dardin, S, Goozen, F, Kerth, LT, Gritsan, A, Lynch, G, Roe, NA, Chen, C, Lae, CK, Hulsbergen, W, Lillard, V, Roberts, D, Lazzaro, A, Palombo, F, Ratti, L, Manfredi, PF, Mandelli, E, Angelini, C, Batignani, G, Bettarini, S, Bondioli, M, Bosi, F, Bucci, F, Calderini, G, Carpinelli, M, Ceccanti, M, Forti, F, Giorgi, MA, Lusiani, A, Mammini, P, Marchiori, G, Morganti, M, Morsani, F, Neri, N, Paoloni, E, Profeti, A, Rama, M, Rizzo, G, Simi, G, Walsh, J, Elmer, P, Perazzo, A, Burchat, P, Edwards, A, Majewski, S, Petersen, BA, Roat, C, Bona, M, Bianchi, F, Gamba, D, Trapani, P, Bosisio, L, Cartaro, C, Cossuti, F, Ricca, GD, Dittongo, S, Grancagnolo, S, Lanceri, L, Vitale, L, Datta, M & Mihalyi, A 2005, 'Lessons learned from BaBar silicon vertex tracker, limits, and future perspectives of the detector', IEEE Transactions on Nuclear Science, vol. 52, no. 3 II, pp. 787-792. https://doi.org/10.1109/TNS.2005.850982

TY - JOUR

T1 - Lessons learned from BaBar silicon vertex tracker, limits, and future perspectives of the detector

AU - Re, V.

AU - Kirkby, D.

AU - Bruinsma, M.

AU - Curry, S.

AU - Berryhill, J.

AU - Burke, S.

AU - Callahan, D.

AU - Campagnari, C.

AU - Dahmes, B.

AU - Hale, D.

AU - Hart, P.

AU - Kyre, S.

AU - Levy, S.

AU - Long, O.

AU - Mazur, M.

AU - Richman, J.

AU - Stoner, J.

AU - Verkerke, W.

AU - Beck, T.

AU - Eisner, A. M.

AU - Kroseberg, J.

AU - Lockman, W. S.

AU - Nesom, G.

AU - Seiden, A.

AU - Spradlin, P.

AU - Walkowiak, W.

AU - Wilson, M.

AU - Bozzi, C.

AU - Cibinetto, G.

AU - Piemontese, L.

AU - Snoek, H. L.

AU - Brown, D.

AU - Charles, E.

AU - Dardin, S.

AU - Goozen, F.

AU - Kerth, L. T.

AU - Gritsan, A.

AU - Lynch, G.

AU - Roe, N. A.

AU - Chen, C.

AU - Lae, C. K.

AU - Hulsbergen, W.

AU - Lillard, V.

AU - Roberts, D.

AU - Lazzaro, A.

AU - Palombo, F.

AU - Ratti, L.

AU - Manfredi, P. F.

AU - Mandelli, E.

AU - Angelini, C.

AU - Batignani, G.

AU - Bettarini, S.

AU - Bondioli, M.

AU - Bosi, F.

AU - Bucci, F.

AU - Calderini, G.

AU - Carpinelli, M.

AU - Ceccanti, M.

AU - Forti, F.

AU - Giorgi, M. A.

AU - Lusiani, A.

AU - Mammini, P.

AU - Marchiori, G.

AU - Morganti, M.

AU - Morsani, F.

AU - Neri, N.

AU - Paoloni, E.

AU - Profeti, A.

AU - Rama, M.

AU - Rizzo, G.

AU - Simi, G.

AU - Walsh, J.

AU - Elmer, P.

AU - Perazzo, A.

AU - Burchat, P.

AU - Edwards, A.

AU - Majewski, S.

AU - Petersen, B. A.

AU - Roat, C.

AU - Bona, M.

AU - Bianchi, F.

AU - Gamba, D.

AU - Trapani, P.

AU - Bosisio, L.

AU - Cartaro, C.

AU - Cossuti, F.

AU - Ricca, G. Della

AU - Dittongo, S.

AU - Grancagnolo, S.

AU - Lanceri, L.

AU - Vitale, L.

AU - Datta, M.

AU - Mihalyi, A.

PY - 2005/6

Y1 - 2005/6

N2 - The silicon vertex tracker (SVT) of the BaBar experiment at PEP-II is described. This is the crucial device for the measurement of the B meson decay vertices to extract charge-conjugation parity (CP) asymmetries. It consists of five layers of double-sided ac-coupled silicon strip detectors, read out by a full-custom integrated circuit, capable of simultaneous acquisition, digitization, and transmission of data. It represents the core of the BaBar tracking system, providing position measurements with a precision of 10 μm (inner layers) and 30 μm (outer layers). The relevant performances of the SVT are presented, and the experience acquired during the construction, installation, and the first five years of data-taking is described. Innovative solutions are high-lighted, like the sophisticated alignment procedure, imposed by the design of the silicon tracker, integrated in the beamline elements and mechanically separated from the other parts of BaBar. The harshness of the background conditions in the interaction region required several studies on the radiation damage of the sensors and the front-end chips, whose results are presented. Over the next five years the luminosity is predicted to increase by a factor three, leading to radiation and occupancy levels significantly exceeding the detector design. Extrapolation of future radiation doses and occupancies is shown together with the expected detector performance and lifetime. Upgrade scenarios to deal with the increased luminosity and backgrounds are discussed.

AB - The silicon vertex tracker (SVT) of the BaBar experiment at PEP-II is described. This is the crucial device for the measurement of the B meson decay vertices to extract charge-conjugation parity (CP) asymmetries. It consists of five layers of double-sided ac-coupled silicon strip detectors, read out by a full-custom integrated circuit, capable of simultaneous acquisition, digitization, and transmission of data. It represents the core of the BaBar tracking system, providing position measurements with a precision of 10 μm (inner layers) and 30 μm (outer layers). The relevant performances of the SVT are presented, and the experience acquired during the construction, installation, and the first five years of data-taking is described. Innovative solutions are high-lighted, like the sophisticated alignment procedure, imposed by the design of the silicon tracker, integrated in the beamline elements and mechanically separated from the other parts of BaBar. The harshness of the background conditions in the interaction region required several studies on the radiation damage of the sensors and the front-end chips, whose results are presented. Over the next five years the luminosity is predicted to increase by a factor three, leading to radiation and occupancy levels significantly exceeding the detector design. Extrapolation of future radiation doses and occupancies is shown together with the expected detector performance and lifetime. Upgrade scenarios to deal with the increased luminosity and backgrounds are discussed.

KW - Radiation damage

KW - Silicon detector

UR - http://www.scopus.com/inward/record.url?scp=23844484242&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=23844484242&partnerID=8YFLogxK

U2 - 10.1109/TNS.2005.850982

DO - 10.1109/TNS.2005.850982

M3 - Article

AN - SCOPUS:23844484242

SN - 0018-9499

VL - 52

SP - 787

EP - 792

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 3 II

ER -

Lessons learned from BaBar silicon vertex tracker, limits, and future perspectives of the detector

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