Abstract
The atomic structure of 1/2 monolayer of Al on GaAs(110) is studied by low energy electron diffraction (LEED) intensity analysis. Room temperature deposition produces a disordered overlayer that does not modify the substrate structure. However, an ordered 1 multiplied by 1 structure results when the system is annealed at 450 degree C. The AES and LEED measurements suggest a reaction of Al on GaAs to form AlAs, in agreement with some of the photoemission data. As a preliminary result, the multiple scattering analysis indicates that a structure for which Al replaces the second layer Ga provides the most satisfactory description of the measured LEED intensities.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 792-796 |
| Number of pages | 5 |
| Journal | Journal of vacuum science & technology |
| Volume | 18 |
| Issue number | 3 |
| DOIs | |
| State | Published - 1980 |
| Event | Proc of the Natl Symp of the Am Vac Soc, 27th, Pt 2 - Detroit, MI, Engl Duration: Oct 13 1980 → Oct 17 1980 |
All Science Journal Classification (ASJC) codes
- General Engineering