The atomic structure of 1/2 monolayer of Al on GaAs(110) is studied by low energy electron diffraction (LEED) intensity analysis. Room temperature deposition produces a disordered overlayer that does not modify the substrate structure. However, an ordered 1 multiplied by 1 structure results when the system is annealed at 450 degree C. The AES and LEED measurements suggest a reaction of Al on GaAs to form AlAs, in agreement with some of the photoemission data. As a preliminary result, the multiple scattering analysis indicates that a structure for which Al replaces the second layer Ga provides the most satisfactory description of the measured LEED intensities.
|Original language||English (US)|
|Number of pages||5|
|Journal||Journal of vacuum science & technology|
|State||Published - Jan 1 1980|
|Event||Proc of the Natl Symp of the Am Vac Soc, 27th, Pt 2 - Detroit, MI, Engl|
Duration: Oct 13 1980 → Oct 17 1980
All Science Journal Classification (ASJC) codes