LEED INTENSITY ANALYSIS OF THE STRUCTURE OF Al ON GaAs(110).

Antoine Kahn, D. Kanani, J. Carelli, J. L. Yeh, C. B. Duke, R. J. Meyer, A. Paton, L. Brillson

Research output: Contribution to journalConference article

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Abstract

The atomic structure of 1/2 monolayer of Al on GaAs(110) is studied by low energy electron diffraction (LEED) intensity analysis. Room temperature deposition produces a disordered overlayer that does not modify the substrate structure. However, an ordered 1 multiplied by 1 structure results when the system is annealed at 450 degree C. The AES and LEED measurements suggest a reaction of Al on GaAs to form AlAs, in agreement with some of the photoemission data. As a preliminary result, the multiple scattering analysis indicates that a structure for which Al replaces the second layer Ga provides the most satisfactory description of the measured LEED intensities.

Original languageEnglish (US)
Pages (from-to)792-796
Number of pages5
JournalJournal of vacuum science & technology
Volume18
Issue number3
DOIs
StatePublished - Jan 1 1980
EventProc of the Natl Symp of the Am Vac Soc, 27th, Pt 2 - Detroit, MI, Engl
Duration: Oct 13 1980Oct 17 1980

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Kahn, A., Kanani, D., Carelli, J., Yeh, J. L., Duke, C. B., Meyer, R. J., Paton, A., & Brillson, L. (1980). LEED INTENSITY ANALYSIS OF THE STRUCTURE OF Al ON GaAs(110). Journal of vacuum science & technology, 18(3), 792-796. https://doi.org/10.1116/1.570949