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LEED and AES Characterization of the GaAs(110)-ZnSe Interface
D. W. Tu,
A. Kahn
Electrical and Computer Engineering
Princeton Institute for Computational Science and Engineering
Princeton Materials Institute
School of Engineering & Applied Science
Research output
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Contribution to journal
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Article
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peer-review
16
Scopus citations
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Keyphrases
Zinc Selenide
100%
GaAs(110)
100%
LEED®
100%
ZnSe Films
66%
Gallium Arsenide
66%
Adsorption
33%
Abrupt Interface
33%
Epitaxial
33%
Atomic Geometry
33%
Interface Geometry
33%
ZnSe Crystal
33%
Se-rich
33%
Atomic Relaxation
33%
Crystallinity
33%
Nearly Stoichiometric
33%
Material Science
Auger Electron Spectroscopy
100%