Abstract
In this paper, we study the composition and structure of epitaxial ZnSe films grown by congruent evaporation on GaAs(110) at a rate of 2 A/min. We find that the films grown on 300 °C GaAs are nearly stoichiometric and form an abrupt interface with the substrate. Films grown at higher temperature (T> 350–400 °C) are Se rich. The crystallinity of films grown at 300 °C is good and their surface atomic geometry is identical to that of a ZnSe crystal. The GaAs-ZnSe interface geometry seems to be dominated by the Se-substrate bonds. The adsorption of Se, during the formation of very thin ZnSe films (2–3 A), produces a (1X 2) LEED pattern and modifications of the LEED I-Vprofiles, which probably indicate a change in the substrate atomic relaxation.
Original language | English (US) |
---|---|
Pages (from-to) | 511-514 |
Number of pages | 4 |
Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
Volume | 2 |
Issue number | 2 |
DOIs | |
State | Published - Apr 1984 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films