LEED and AES Characterization of the GaAs(110)-ZnSe Interface

D. W. Tu, A. Kahn

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In this paper, we study the composition and structure of epitaxial ZnSe films grown by congruent evaporation on GaAs(110) at a rate of 2 A/min. We find that the films grown on 300 °C GaAs are nearly stoichiometric and form an abrupt interface with the substrate. Films grown at higher temperature (T> 350–400 °C) are Se rich. The crystallinity of films grown at 300 °C is good and their surface atomic geometry is identical to that of a ZnSe crystal. The GaAs-ZnSe interface geometry seems to be dominated by the Se-substrate bonds. The adsorption of Se, during the formation of very thin ZnSe films (2–3 A), produces a (1X 2) LEED pattern and modifications of the LEED I-Vprofiles, which probably indicate a change in the substrate atomic relaxation.

Original languageEnglish (US)
Pages (from-to)511-514
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number2
StatePublished - Apr 1984

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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