Abstract
Quantitative LEED measurements from a GaAs(110) surface covered by a half monolayer of Al show evidence for new ordered 1 multiplied by 1 structure after annealing at 450 degree C. Data are recorded for 0. 5, 0. 75 and 1 monolayer coverages and correlated with Auger measurements. The LEED data are compared to intensity computations and a tentative explanation of the structure is given.
| Original language | English (US) |
|---|---|
| Pages | 711-714 |
| Number of pages | 4 |
| State | Published - 1980 |
| Event | Unknown conference - Cannes, Fr Duration: Sep 22 1980 → Sep 26 1980 |
Conference
| Conference | Unknown conference |
|---|---|
| City | Cannes, Fr |
| Period | 9/22/80 → 9/26/80 |
All Science Journal Classification (ASJC) codes
- General Engineering