Quantitative LEED measurements from a GaAs(110) surface covered by a half monolayer of Al show evidence for new ordered 1 multiplied by 1 structure after annealing at 450 degree C. Data are recorded for 0. 5, 0. 75 and 1 monolayer coverages and correlated with Auger measurements. The LEED data are compared to intensity computations and a tentative explanation of the structure is given.
|Original language||English (US)|
|Number of pages||4|
|State||Published - Jan 1 1980|
|Event||Unknown conference - Cannes, Fr|
Duration: Sep 22 1980 → Sep 26 1980
|Period||9/22/80 → 9/26/80|
All Science Journal Classification (ASJC) codes