LEED ANALYSIS OF THE INTERACTION OF Al WITH THE GaAs(110) SURFACE.

D. Kanani, Antoine Kahn, P. Mark

Research output: Contribution to conferencePaper

Abstract

Quantitative LEED measurements from a GaAs(110) surface covered by a half monolayer of Al show evidence for new ordered 1 multiplied by 1 structure after annealing at 450 degree C. Data are recorded for 0. 5, 0. 75 and 1 monolayer coverages and correlated with Auger measurements. The LEED data are compared to intensity computations and a tentative explanation of the structure is given.

Original languageEnglish (US)
Pages711-714
Number of pages4
StatePublished - Jan 1 1980
EventUnknown conference - Cannes, Fr
Duration: Sep 22 1980Sep 26 1980

Conference

ConferenceUnknown conference
CityCannes, Fr
Period9/22/809/26/80

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'LEED ANALYSIS OF THE INTERACTION OF Al WITH THE GaAs(110) SURFACE.'. Together they form a unique fingerprint.

  • Cite this

    Kanani, D., Kahn, A., & Mark, P. (1980). LEED ANALYSIS OF THE INTERACTION OF Al WITH THE GaAs(110) SURFACE.. 711-714. Paper presented at Unknown conference, Cannes, Fr, .