TY - JOUR
T1 - Leaky electronic states for photovoltaic photodetectors based on asymmetric superlattices
AU - Penello, Germano Maioli
AU - Pereira, Pedro Henrique
AU - Pires, Mauricio Pamplona
AU - Sivco, Deborah
AU - Gmachl, Claire F.
AU - Souza, Patricia Lustoza
N1 - Publisher Copyright:
© 2018 Author(s).
PY - 2018/1/15
Y1 - 2018/1/15
N2 - The concept of leaky electronic states in the continuum is used to achieve room temperature operation of photovoltaic superlattice infrared photodetectors. A structural asymmetric InGaAs/InAlAs potential profile is designed to create states in the continuum with the preferential direction for electron extraction and, consequently, to obtain photovoltaic operation at room temperature. Due to the photovoltaic operation and virtual increase in the bandoffset, the device presents both low dark current and low noise. The Johnson noise limited specific detectivity reaches values as high as 1.4 × 1011 Jones at 80 K. At 300 K, the detectivity obtained is 7.0 × 105 Jones.
AB - The concept of leaky electronic states in the continuum is used to achieve room temperature operation of photovoltaic superlattice infrared photodetectors. A structural asymmetric InGaAs/InAlAs potential profile is designed to create states in the continuum with the preferential direction for electron extraction and, consequently, to obtain photovoltaic operation at room temperature. Due to the photovoltaic operation and virtual increase in the bandoffset, the device presents both low dark current and low noise. The Johnson noise limited specific detectivity reaches values as high as 1.4 × 1011 Jones at 80 K. At 300 K, the detectivity obtained is 7.0 × 105 Jones.
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U2 - 10.1063/1.5006464
DO - 10.1063/1.5006464
M3 - Article
AN - SCOPUS:85041447185
SN - 0003-6951
VL - 112
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 3
M1 - 033503
ER -