Leaky electronic states for photovoltaic photodetectors based on asymmetric superlattices

Germano Maioli Penello; Pedro Henrique Pereira; Mauricio Pamplona Pires; Deborah Sivco; Claire F. Gmachl; Patricia Lustoza Souza

doi:10.1063/1.5006464

Leaky electronic states for photovoltaic photodetectors based on asymmetric superlattices

Germano Maioli Penello, Pedro Henrique Pereira, Mauricio Pamplona Pires, Deborah Sivco, Claire F. Gmachl, Patricia Lustoza Souza

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The concept of leaky electronic states in the continuum is used to achieve room temperature operation of photovoltaic superlattice infrared photodetectors. A structural asymmetric InGaAs/InAlAs potential profile is designed to create states in the continuum with the preferential direction for electron extraction and, consequently, to obtain photovoltaic operation at room temperature. Due to the photovoltaic operation and virtual increase in the bandoffset, the device presents both low dark current and low noise. The Johnson noise limited specific detectivity reaches values as high as 1.4 × 10¹¹ Jones at 80 K. At 300 K, the detectivity obtained is 7.0 × 10⁵ Jones.

Original language	English (US)
Article number	033503
Journal	Applied Physics Letters
Volume	112
Issue number	3
DOIs	https://doi.org/10.1063/1.5006464
State	Published - Jan 15 2018

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Leaky electronic states for photovoltaic photodetectors based on asymmetric superlattices",

abstract = "The concept of leaky electronic states in the continuum is used to achieve room temperature operation of photovoltaic superlattice infrared photodetectors. A structural asymmetric InGaAs/InAlAs potential profile is designed to create states in the continuum with the preferential direction for electron extraction and, consequently, to obtain photovoltaic operation at room temperature. Due to the photovoltaic operation and virtual increase in the bandoffset, the device presents both low dark current and low noise. The Johnson noise limited specific detectivity reaches values as high as 1.4 × 1011 Jones at 80 K. At 300 K, the detectivity obtained is 7.0 × 105 Jones.",

author = "Penello, {Germano Maioli} and Pereira, {Pedro Henrique} and Pires, {Mauricio Pamplona} and Deborah Sivco and Gmachl, {Claire F.} and Souza, {Patricia Lustoza}",

note = "Funding Information: The authors would like to thank CAPES foundation, CNPq, FAPERJ, and FINEP for the financial support. Publisher Copyright: {\textcopyright} 2018 Author(s).",

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doi = "10.1063/1.5006464",

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T1 - Leaky electronic states for photovoltaic photodetectors based on asymmetric superlattices

AU - Penello, Germano Maioli

AU - Pereira, Pedro Henrique

AU - Pires, Mauricio Pamplona

AU - Sivco, Deborah

AU - Gmachl, Claire F.

AU - Souza, Patricia Lustoza

PY - 2018/1/15

Y1 - 2018/1/15

N2 - The concept of leaky electronic states in the continuum is used to achieve room temperature operation of photovoltaic superlattice infrared photodetectors. A structural asymmetric InGaAs/InAlAs potential profile is designed to create states in the continuum with the preferential direction for electron extraction and, consequently, to obtain photovoltaic operation at room temperature. Due to the photovoltaic operation and virtual increase in the bandoffset, the device presents both low dark current and low noise. The Johnson noise limited specific detectivity reaches values as high as 1.4 × 1011 Jones at 80 K. At 300 K, the detectivity obtained is 7.0 × 105 Jones.

AB - The concept of leaky electronic states in the continuum is used to achieve room temperature operation of photovoltaic superlattice infrared photodetectors. A structural asymmetric InGaAs/InAlAs potential profile is designed to create states in the continuum with the preferential direction for electron extraction and, consequently, to obtain photovoltaic operation at room temperature. Due to the photovoltaic operation and virtual increase in the bandoffset, the device presents both low dark current and low noise. The Johnson noise limited specific detectivity reaches values as high as 1.4 × 1011 Jones at 80 K. At 300 K, the detectivity obtained is 7.0 × 105 Jones.

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Leaky electronic states for photovoltaic photodetectors based on asymmetric superlattices

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