Leakage Current Modeling of Series-Connected Thin Film Transistors

J. C. Sturm, I. W. Wu, M. Hack

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

The leakage current of an arbitrary number of series-connected polysilicon Thin Film Transistors (TFT's) with a common gate is shown to be easily computed from the I-V characteristics of a single FET for the first time, both by an analytical model and by graphical techniques. Good agreement with experimental data is obtained for drain biases greater than ~1 V. The work is also applicable to single crystal Silicon-On-Insulator (SOI) TFT's.

Original languageEnglish (US)
Pages (from-to)1561-1563
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume42
Issue number8
DOIs
StatePublished - Aug 1995

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Leakage Current Modeling of Series-Connected Thin Film Transistors'. Together they form a unique fingerprint.

  • Cite this