Layer Ordering and Faulting in (GaAs)n/(AlAs)n Ultrashort-Period Superlattices

J. H. Li, S. C. Moss, Y. Zhang, A. Mascarenhas, L. N. Pfeiffer, K. W. West, W. K. Ge, J. Bai

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


The layer ordering and faulting in (GaAs)n/(AlAs)n ultrashort-period superlattices was studied by using synchrotron x-ray scattering method. The effect of growth interruption on the interfacial structure was also discussed. It was found that the interfaces of these superlattices contain features on two different length scales namely random atomic mixture and ordered mesoscopic domains.

Original languageEnglish (US)
Article number106103
Pages (from-to)1061031-1061034
Number of pages4
JournalPhysical review letters
Issue number10
StatePublished - Sep 5 2003
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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