Laterally Modulated 2D Electron System in the Extreme Quantum Limit

S. Melinte, Mona Berciu, Chenggang Zhou, E. Tutuc, S. J. Papadakis, C. Harrison, E. P. De Poortere, Mingshaw Wu, P. M. Chaikin, M. Shayegan, R. N. Bhatt, R. A. Register

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Abstract

The low-T magnetotransport measurements in a GaAs/AlGaAs two-dimensional electron system (2DES), at a distance of 32 nm below the surface were analyzed. The sample studied was grown by molecular beam epitaxy, and consisted of a GaAs/Al0.3Ga0.7As heterostructure with a 2DES. The diagonal resistivity displayed a rich pattern of fluctuations, even though the disorder dominates over the periodic modulation, for low Landau level fillings v. The data was explained by the theoretical arguments based on the combined effects of the long-wavelength, strong disorder and the short-wavelength, weak periodic modulation present in the 2DES.

Original languageEnglish (US)
Article number036802
Pages (from-to)368021-368024
Number of pages4
JournalPhysical review letters
Volume92
Issue number3
StatePublished - Jan 23 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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