Laterally Modulated 2D Electron System in the Extreme Quantum Limit

S. Melinte; Mona Berciu; Chenggang Zhou; E. Tutuc; S. J. Papadakis; C. Harrison; E. P. De Poortere; Mingshaw Wu; P. M. Chaikin; M. Shayegan; R. N. Bhatt; R. A. Register

Laterally Modulated 2D Electron System in the Extreme Quantum Limit

S. Melinte, Mona Berciu, Chenggang Zhou, E. Tutuc, S. J. Papadakis, C. Harrison, E. P. De Poortere, Mingshaw Wu, P. M. Chaikin, M. Shayegan, R. N. Bhatt, R. A. Register

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42 Scopus citations

Abstract

The low-T magnetotransport measurements in a GaAs/AlGaAs two-dimensional electron system (2DES), at a distance of 32 nm below the surface were analyzed. The sample studied was grown by molecular beam epitaxy, and consisted of a GaAs/Al_0.3Ga_0.7As heterostructure with a 2DES. The diagonal resistivity displayed a rich pattern of fluctuations, even though the disorder dominates over the periodic modulation, for low Landau level fillings v. The data was explained by the theoretical arguments based on the combined effects of the long-wavelength, strong disorder and the short-wavelength, weak periodic modulation present in the 2DES.

Original language	English (US)
Article number	036802
Pages (from-to)	368021-368024
Number of pages	4
Journal	Physical review letters
Volume	92
Issue number	3
State	Published - Jan 23 2004

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Cite this

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title = "Laterally Modulated 2D Electron System in the Extreme Quantum Limit",

abstract = "The low-T magnetotransport measurements in a GaAs/AlGaAs two-dimensional electron system (2DES), at a distance of 32 nm below the surface were analyzed. The sample studied was grown by molecular beam epitaxy, and consisted of a GaAs/Al0.3Ga0.7As heterostructure with a 2DES. The diagonal resistivity displayed a rich pattern of fluctuations, even though the disorder dominates over the periodic modulation, for low Landau level fillings v. The data was explained by the theoretical arguments based on the combined effects of the long-wavelength, strong disorder and the short-wavelength, weak periodic modulation present in the 2DES.",

author = "S. Melinte and Mona Berciu and Chenggang Zhou and E. Tutuc and Papadakis, {S. J.} and C. Harrison and {De Poortere}, {E. P.} and Mingshaw Wu and Chaikin, {P. M.} and M. Shayegan and Bhatt, {R. N.} and Register, {R. A.}",

year = "2004",

month = jan,

day = "23",

language = "English (US)",

volume = "92",

pages = "368021--368024",

journal = "Physical review letters",

issn = "0031-9007",

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TY - JOUR

T1 - Laterally Modulated 2D Electron System in the Extreme Quantum Limit

AU - Melinte, S.

AU - Berciu, Mona

AU - Zhou, Chenggang

AU - Tutuc, E.

AU - Papadakis, S. J.

AU - Harrison, C.

AU - De Poortere, E. P.

AU - Wu, Mingshaw

AU - Chaikin, P. M.

AU - Shayegan, M.

AU - Bhatt, R. N.

AU - Register, R. A.

PY - 2004/1/23

Y1 - 2004/1/23

N2 - The low-T magnetotransport measurements in a GaAs/AlGaAs two-dimensional electron system (2DES), at a distance of 32 nm below the surface were analyzed. The sample studied was grown by molecular beam epitaxy, and consisted of a GaAs/Al0.3Ga0.7As heterostructure with a 2DES. The diagonal resistivity displayed a rich pattern of fluctuations, even though the disorder dominates over the periodic modulation, for low Landau level fillings v. The data was explained by the theoretical arguments based on the combined effects of the long-wavelength, strong disorder and the short-wavelength, weak periodic modulation present in the 2DES.

AB - The low-T magnetotransport measurements in a GaAs/AlGaAs two-dimensional electron system (2DES), at a distance of 32 nm below the surface were analyzed. The sample studied was grown by molecular beam epitaxy, and consisted of a GaAs/Al0.3Ga0.7As heterostructure with a 2DES. The diagonal resistivity displayed a rich pattern of fluctuations, even though the disorder dominates over the periodic modulation, for low Landau level fillings v. The data was explained by the theoretical arguments based on the combined effects of the long-wavelength, strong disorder and the short-wavelength, weak periodic modulation present in the 2DES.

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M3 - Article

AN - SCOPUS:10744228490

SN - 0031-9007

VL - 92

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EP - 368024

JO - Physical review letters

JF - Physical review letters

IS - 3

M1 - 036802

ER -

Laterally Modulated 2D Electron System in the Extreme Quantum Limit

Abstract

All Science Journal Classification (ASJC) codes

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