LATERAL SILICON-ON-INSULATOR BIPOLAR TRANSISTOR WITH A SELF-ALIGNED BASE CONTACT.

James C. Sturm; James P. McVittie; James F. Gibbons; L. Pfeiffer

LATERAL SILICON-ON-INSULATOR BIPOLAR TRANSISTOR WITH A SELF-ALIGNED BASE CONTACT.

James C. Sturm, James P. McVittie, James F. Gibbons, L. Pfeiffer

Research output: Contribution to journal › Article › peer-review

Abstract

A novel lateral bipolar transistor structure in silicon-on-insulator (SOI) is presented. The structure allows for a minimum geometry base width yet still provides for a metal contact to the entire base region. Fabricated transistors exhibit a base resistance of less than 20 OMEGA .

Original language	English (US)
Pages (from-to)	104-106
Number of pages	3
Journal	Electron device letters
Volume	EDL-8
Issue number	3
State	Published - Mar 1987
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

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title = "LATERAL SILICON-ON-INSULATOR BIPOLAR TRANSISTOR WITH A SELF-ALIGNED BASE CONTACT.",

abstract = "A novel lateral bipolar transistor structure in silicon-on-insulator (SOI) is presented. The structure allows for a minimum geometry base width yet still provides for a metal contact to the entire base region. Fabricated transistors exhibit a base resistance of less than 20 OMEGA .",

author = "Sturm, {James C.} and McVittie, {James P.} and Gibbons, {James F.} and L. Pfeiffer",

year = "1987",

month = mar,

language = "English (US)",

volume = "EDL-8",

pages = "104--106",

journal = "Electron device letters",

issn = "0193-8576",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

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T1 - LATERAL SILICON-ON-INSULATOR BIPOLAR TRANSISTOR WITH A SELF-ALIGNED BASE CONTACT.

AU - Sturm, James C.

AU - McVittie, James P.

AU - Gibbons, James F.

AU - Pfeiffer, L.

PY - 1987/3

Y1 - 1987/3

N2 - A novel lateral bipolar transistor structure in silicon-on-insulator (SOI) is presented. The structure allows for a minimum geometry base width yet still provides for a metal contact to the entire base region. Fabricated transistors exhibit a base resistance of less than 20 OMEGA .

AB - A novel lateral bipolar transistor structure in silicon-on-insulator (SOI) is presented. The structure allows for a minimum geometry base width yet still provides for a metal contact to the entire base region. Fabricated transistors exhibit a base resistance of less than 20 OMEGA .

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UR - http://www.scopus.com/inward/citedby.url?scp=0023315140&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0023315140

SN - 0193-8576

VL - EDL-8

SP - 104

EP - 106

JO - Electron device letters

JF - Electron device letters

IS - 3

ER -

LATERAL SILICON-ON-INSULATOR BIPOLAR TRANSISTOR WITH A SELF-ALIGNED BASE CONTACT.

Abstract

All Science Journal Classification (ASJC) codes

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