A novel lateral bipolar transistor structure in silicon-on-insulator (SOI) is presented. The structure allows for a minimum geometry base width yet still provides for a metal contact to the entire base region. Fabricated transistors exhibit a base resistance of less than 20 OMEGA .
|Original language||English (US)|
|Number of pages||3|
|Journal||Electron device letters|
|State||Published - Mar 1 1987|
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