LATERAL SILICON-ON-INSULATOR BIPOLAR TRANSISTOR WITH A SELF-ALIGNED BASE CONTACT.

James C. Sturm, James P. McVittie, James F. Gibbons, L. Pfeiffer

Research output: Contribution to journalArticle

25 Scopus citations

Abstract

A novel lateral bipolar transistor structure in silicon-on-insulator (SOI) is presented. The structure allows for a minimum geometry base width yet still provides for a metal contact to the entire base region. Fabricated transistors exhibit a base resistance of less than 20 OMEGA .

Original languageEnglish (US)
Pages (from-to)104-106
Number of pages3
JournalElectron device letters
VolumeEDL-8
Issue number3
StatePublished - Mar 1 1987
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Sturm, J. C., McVittie, J. P., Gibbons, J. F., & Pfeiffer, L. (1987). LATERAL SILICON-ON-INSULATOR BIPOLAR TRANSISTOR WITH A SELF-ALIGNED BASE CONTACT. Electron device letters, EDL-8(3), 104-106.