Lateral diffusion of excitons in double quantum well structures

Z. Vörös, R. Balili, D. Snoke, L. Pfeiffer, K. West

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on lateral diffusion measurements of excitons in GaAs/AlGaAs double quantum wells of various width. In wide quantum wells the excitons have lifetime up to 10 microseconds and diffusion length up to 500 microns.

Original languageEnglish (US)
Title of host publication2005 Quantum Electronics and Laser Science Conference (QELS)
Pages698-699
Number of pages2
StatePublished - 2005
Externally publishedYes
Event2005 Quantum Electronics and Laser Science Conference (QELS) - Baltimore, MD, United States
Duration: May 22 2005May 27 2005

Publication series

NameQuantum Electronics and Laser Science Conference (QELS)
Volume2

Other

Other2005 Quantum Electronics and Laser Science Conference (QELS)
Country/TerritoryUnited States
CityBaltimore, MD
Period5/22/055/27/05

All Science Journal Classification (ASJC) codes

  • General Engineering

Fingerprint

Dive into the research topics of 'Lateral diffusion of excitons in double quantum well structures'. Together they form a unique fingerprint.

Cite this