Integration of active electronics into photonic systems is necessary for large-scale photonic integration. While heterogeneous integration leverages high-performance electronics, a monolithic scheme can coexist by aiding the electronic processing, improving overall efficiency. We report a lateral bipolar junction transistor on a commercial silicon photonics foundry process. We achieved a DC current gain of 10 with a Darlington configuration, and using measured S-parameters for a single BJT, the available AC gain was at least 3dB for signal frequencies up to 1.1 GHz. Our single BJT demonstrated a transimpedance of 3.2mS/µm, which is about 70 times better than existing literature.
|Original language||English (US)|
|Number of pages||13|
|State||Published - Apr 13 2020|
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics