Lateral bipolar junction transistor on a silicon photonics platform

Aashu Jha; Thomas Ferreira de Lima; Hooman Saeidi; Simon Bilodeau; Alexander N. Tait; Chaoran Huang; Siamak Abbaslou; Bhavin Shastri; Paul R. Prucnal

doi:10.1364/OE.389213

Lateral bipolar junction transistor on a silicon photonics platform

Aashu Jha, Thomas Ferreira de Lima, Hooman Saeidi, Simon Bilodeau, Alexander N. Tait, Chaoran Huang, Siamak Abbaslou, Bhavin Shastri, Paul R. Prucnal

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Integration of active electronics into photonic systems is necessary for large-scale photonic integration. While heterogeneous integration leverages high-performance electronics, a monolithic scheme can coexist by aiding the electronic processing, improving overall efficiency. We report a lateral bipolar junction transistor on a commercial silicon photonics foundry process. We achieved a DC current gain of 10 with a Darlington configuration, and using measured S-parameters for a single BJT, the available AC gain was at least 3dB for signal frequencies up to 1.1 GHz. Our single BJT demonstrated a transimpedance of 3.2mS/µm, which is about 70 times better than existing literature.

Original language	English (US)
Pages (from-to)	11692-11704
Number of pages	13
Journal	Optics Express
Volume	28
Issue number	8
DOIs	https://doi.org/10.1364/OE.389213
State	Published - Apr 13 2020

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics

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10.1364/OE.389213

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@article{f579844ccc4e4019a3baf6e8a97d9e35,

title = "Lateral bipolar junction transistor on a silicon photonics platform",

abstract = "Integration of active electronics into photonic systems is necessary for large-scale photonic integration. While heterogeneous integration leverages high-performance electronics, a monolithic scheme can coexist by aiding the electronic processing, improving overall efficiency. We report a lateral bipolar junction transistor on a commercial silicon photonics foundry process. We achieved a DC current gain of 10 with a Darlington configuration, and using measured S-parameters for a single BJT, the available AC gain was at least 3dB for signal frequencies up to 1.1 GHz. Our single BJT demonstrated a transimpedance of 3.2mS/µm, which is about 70 times better than existing literature.",

author = "Aashu Jha and {de Lima}, {Thomas Ferreira} and Hooman Saeidi and Simon Bilodeau and Tait, {Alexander N.} and Chaoran Huang and Siamak Abbaslou and Bhavin Shastri and Prucnal, {Paul R.}",

note = "Publisher Copyright: {\textcopyright} 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement",

year = "2020",

month = apr,

day = "13",

doi = "10.1364/OE.389213",

language = "English (US)",

volume = "28",

pages = "11692--11704",

journal = "Optics Express",

issn = "1094-4087",

publisher = "Optica Publishing Group",

number = "8",

}

TY - JOUR

T1 - Lateral bipolar junction transistor on a silicon photonics platform

AU - Jha, Aashu

AU - de Lima, Thomas Ferreira

AU - Saeidi, Hooman

AU - Bilodeau, Simon

AU - Tait, Alexander N.

AU - Huang, Chaoran

AU - Abbaslou, Siamak

AU - Shastri, Bhavin

AU - Prucnal, Paul R.

PY - 2020/4/13

Y1 - 2020/4/13

N2 - Integration of active electronics into photonic systems is necessary for large-scale photonic integration. While heterogeneous integration leverages high-performance electronics, a monolithic scheme can coexist by aiding the electronic processing, improving overall efficiency. We report a lateral bipolar junction transistor on a commercial silicon photonics foundry process. We achieved a DC current gain of 10 with a Darlington configuration, and using measured S-parameters for a single BJT, the available AC gain was at least 3dB for signal frequencies up to 1.1 GHz. Our single BJT demonstrated a transimpedance of 3.2mS/µm, which is about 70 times better than existing literature.

AB - Integration of active electronics into photonic systems is necessary for large-scale photonic integration. While heterogeneous integration leverages high-performance electronics, a monolithic scheme can coexist by aiding the electronic processing, improving overall efficiency. We report a lateral bipolar junction transistor on a commercial silicon photonics foundry process. We achieved a DC current gain of 10 with a Darlington configuration, and using measured S-parameters for a single BJT, the available AC gain was at least 3dB for signal frequencies up to 1.1 GHz. Our single BJT demonstrated a transimpedance of 3.2mS/µm, which is about 70 times better than existing literature.

UR - http://www.scopus.com/inward/record.url?scp=85083330105&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85083330105&partnerID=8YFLogxK

U2 - 10.1364/OE.389213

DO - 10.1364/OE.389213

M3 - Article

C2 - 32403675

AN - SCOPUS:85083330105

SN - 1094-4087

VL - 28

SP - 11692

EP - 11704

JO - Optics Express

JF - Optics Express

IS - 8

ER -

Lateral bipolar junction transistor on a silicon photonics platform

Abstract

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