Lateral bipolar junction transistor on a silicon photonics platform

Aashu Jha, Thomas Ferreira de Lima, Hooman Saeidi, Simon Bilodeau, Alexander N. Tait, Chaoran Huang, Siamak Abbaslou, Bhavin Shastri, Paul R. Prucnal

Research output: Contribution to journalArticle

Abstract

Integration of active electronics into photonic systems is necessary for large-scale photonic integration. While heterogeneous integration leverages high-performance electronics, a monolithic scheme can coexist by aiding the electronic processing, improving overall efficiency. We report a lateral bipolar junction transistor on a commercial silicon photonics foundry process. We achieved a DC current gain of 10 with a Darlington configuration, and using measured S-parameters for a single BJT, the available AC gain was at least 3dB for signal frequencies up to 1.1 GHz. Our single BJT demonstrated a transimpedance of 3.2mS/µm, which is about 70 times better than existing literature.

Original languageEnglish (US)
Pages (from-to)11692-11704
Number of pages13
JournalOptics Express
Volume28
Issue number8
DOIs
StatePublished - Apr 13 2020

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Fingerprint Dive into the research topics of 'Lateral bipolar junction transistor on a silicon photonics platform'. Together they form a unique fingerprint.

  • Cite this

    Jha, A., de Lima, T. F., Saeidi, H., Bilodeau, S., Tait, A. N., Huang, C., Abbaslou, S., Shastri, B., & Prucnal, P. R. (2020). Lateral bipolar junction transistor on a silicon photonics platform. Optics Express, 28(8), 11692-11704. https://doi.org/10.1364/OE.389213