Abstract
Enhancement of multiphonon tunneling recombination of free carriers in strong laser fields is shown to offer a mechanism whereby ultrafast carrier-density dynamics in a semiconductor can be controlled by properly shaped laser pulses. This regime of laser-solid interaction enables an ultrafast switching of optical and electric properties of semiconductor materials, suggesting new strategies for laser micromachining and nanomachining, optical data processing, and ultrafast plasmonics.
Original language | English (US) |
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Article number | 033109 |
Journal | Journal of Applied Physics |
Volume | 109 |
Issue number | 3 |
DOIs | |
State | Published - Feb 1 2011 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy