Large intrinsic inductance in strongly correlated GaAs two-dimensional holes in the integer quantum hall regime

Talbot Knighton; Vinicio Tarquini; Zhe Wu; Jian Huang; Loren Pfeiffer; Ken West

doi:10.1063/1.4876921

Large intrinsic inductance in strongly correlated GaAs two-dimensional holes in the integer quantum hall regime

Talbot Knighton
, Vinicio Tarquini
, Zhe Wu
, Jian Huang
, Loren Pfeiffer
, Ken West

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Quantum Hall measurements are performed for a two-dimensional hole system (2DHS) confined to a 20 nm quantum well in 〈100〉 GaAs. Quantum oscillations reveal a density of 4 - 5×1010 cm-2 with mobility μ = 1 × 10⁶ cm²/V s. For temperatures less than ∼350 mK, anomalous insulating peaks are observed between integer fillings 1-2, 2-3, and 3-4. A large out-of-phase signal appears at these peaks, which indicates a substantial inductance inherent to the charge carriers.

Original language	English (US)
Article number	193109
Journal	Applied Physics Letters
Volume	104
Issue number	19
DOIs	https://doi.org/10.1063/1.4876921
State	Published - May 12 2014
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4876921

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abstract = "Quantum Hall measurements are performed for a two-dimensional hole system (2DHS) confined to a 20 nm quantum well in 〈100〉 GaAs. Quantum oscillations reveal a density of 4 - 5×1010 cm-2 with mobility μ = 1 × 106 cm2/V s. For temperatures less than ∼350 mK, anomalous insulating peaks are observed between integer fillings 1-2, 2-3, and 3-4. A large out-of-phase signal appears at these peaks, which indicates a substantial inductance inherent to the charge carriers.",

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AU - Knighton, Talbot

AU - Tarquini, Vinicio

AU - Wu, Zhe

AU - Huang, Jian

AU - Pfeiffer, Loren

AU - West, Ken

PY - 2014/5/12

Y1 - 2014/5/12

N2 - Quantum Hall measurements are performed for a two-dimensional hole system (2DHS) confined to a 20 nm quantum well in 〈100〉 GaAs. Quantum oscillations reveal a density of 4 - 5×1010 cm-2 with mobility μ = 1 × 106 cm2/V s. For temperatures less than ∼350 mK, anomalous insulating peaks are observed between integer fillings 1-2, 2-3, and 3-4. A large out-of-phase signal appears at these peaks, which indicates a substantial inductance inherent to the charge carriers.

AB - Quantum Hall measurements are performed for a two-dimensional hole system (2DHS) confined to a 20 nm quantum well in 〈100〉 GaAs. Quantum oscillations reveal a density of 4 - 5×1010 cm-2 with mobility μ = 1 × 106 cm2/V s. For temperatures less than ∼350 mK, anomalous insulating peaks are observed between integer fillings 1-2, 2-3, and 3-4. A large out-of-phase signal appears at these peaks, which indicates a substantial inductance inherent to the charge carriers.

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UR - https://www.scopus.com/pages/publications/84900850595#tab=citedBy

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JO - Applied Physics Letters

JF - Applied Physics Letters

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M1 - 193109

ER -

Large intrinsic inductance in strongly correlated GaAs two-dimensional holes in the integer quantum hall regime

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