Large intrinsic inductance in strongly correlated GaAs two-dimensional holes in the integer quantum hall regime

Talbot Knighton, Vinicio Tarquini, Zhe Wu, Jian Huang, Loren Pfeiffer, Ken West

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Quantum Hall measurements are performed for a two-dimensional hole system (2DHS) confined to a 20 nm quantum well in 〈100〉 GaAs. Quantum oscillations reveal a density of 4 - 5×1010 cm-2 with mobility μ = 1 × 106 cm2/V s. For temperatures less than ∼350 mK, anomalous insulating peaks are observed between integer fillings 1-2, 2-3, and 3-4. A large out-of-phase signal appears at these peaks, which indicates a substantial inductance inherent to the charge carriers.

Original languageEnglish (US)
Article number193109
JournalApplied Physics Letters
Volume104
Issue number19
DOIs
StatePublished - May 12 2014
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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