Large-grain polysilicon films with low intragranular defect density by low-temperature solid-phase crystallization

Xiang Zhen Bo, Nan Yao, J. C. Sturm

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

Solid phase crystallization (SPC) of a-Si:H at 600°C was investigated by transmission electron microscopy (TEM) and Raman spectroscopy in a cantilever structure, where the underlying SiO2 was removed prior to the crystallization. The absence of the underlying oxide leads to both a higher grain size and a lower intragranular defect density. The grain size increases from 0.6 μm in regions with the underlying oxide to 3.0 μm without the underlying oxide, and the intragranular defect density decreases one order of magnitude from ∼ 1011 cm-2 to ∼ 1010 cm-2. The improvements in material quality without the lower a-Si/SiO2 interface are thought to be due to a lower nucleation rate and a lower tensile stress with an easier silicon atomic rearrangement at the lower silicon interface.

Original languageEnglish (US)
Pages (from-to)187-192
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume715
DOIs
StatePublished - 2002
EventAmorphous and Heterogeneous Silicon Films 2002 - San Francisco, CA, United States
Duration: Apr 2 2002Apr 5 2002

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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