Large-chern-number quantum anomalous hall effect in thin-film topological crystalline insulators

Chen Fang, Matthew J. Gilbert, B. Andrei Bernevig

Research output: Contribution to journalArticlepeer-review

177 Scopus citations


We theoretically predict that thin-film topological crystalline insulators can host various quantum anomalous Hall phases when doped by ferromagnetically ordered dopants. Any Chern number between ±4 can, in principle, be reached as a result of the interplay between (a) the induced Zeeman field, depending on the magnetic doping concentration, (b) the structural distortion, either intrinsic or induced by a piezoelectric material through the proximity effect, and (c) the thickness of the thin film. We propose a heterostructure to realize quantum anomalous Hall phases with Chern numbers that can be tuned by electric fields.

Original languageEnglish (US)
Article number046801
JournalPhysical review letters
Issue number4
StatePublished - Jan 27 2014

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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