Abstract
We demonstrate a large-area fabrication of hexagonally ordered metal dot arrays with an area density of ∼ 1011/cm2. We produced 20 nm dots with a 40 nm period by combining block copolymer nanolithography and a trilayer resist technique. A self-assembled spherical-phase block copolymer top layer spontaneously generated the pattern, acting as a template. The pattern was first transferred to a silicon nitride middle layer by reactive ion etch, producing holes. The nitride layer was then used as a mask to further etch into a polyimide bottom layer. The metal dots were produced by an electron beam evaporation followed by a lift-off process. Our method provides a viable route for highly dense nanoscale patterning of different materials on arbitrary surfaces.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 257-259 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 79 |
| Issue number | 2 |
| DOIs | |
| State | Published - Jul 9 2001 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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