Large anomalous Hall effect in ferromagnetic insulator-topological insulator heterostructures

L. D. Alegria; H. Ji; N. Yao; J. J. Clarke; R. J. Cava; J. R. Petta

doi:10.1063/1.4892353

Large anomalous Hall effect in ferromagnetic insulator-topological insulator heterostructures

L. D. Alegria
, H. Ji
, N. Yao
, J. J. Clarke
, R. J. Cava
, J. R. Petta

Research output: Contribution to journal › Article › peer-review

124 Scopus citations

Abstract

We demonstrate the van der Waals epitaxy of the topological insulator compound Bi₂Te₃ on the ferromagnetic insulator Cr ₂Ge₂Te₆. The layers are oriented with (001)Bi₂Te₃||(001)Cr₂Ge₂Te ₆ and (110)Bi₂Te₃||(100)Cr₂Ge ₂Te₆. Cross-sectional transmission electron microscopy indicates the formation of a sharp interface. At low temperatures, bilayers consisting of Bi₂Te₃ on Cr₂Ge ₂Te₆ exhibit a large anomalous Hall effect (AHE). Tilted field studies of the AHE indicate that the easy axis lies along the c-axis of the heterostructure, consistent with magnetization measurements in bulk Cr ₂Ge₂Te₆. The 61 K Curie temperature of Cr ₂Ge₂Te₆ and the use of near-stoichiometric materials may lead to the development of spintronic devices based on the AHE.

Original language	English (US)
Article number	053512
Journal	Applied Physics Letters
Volume	105
Issue number	5
DOIs	https://doi.org/10.1063/1.4892353
State	Published - Aug 4 2014

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4892353

Cite this

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title = "Large anomalous Hall effect in ferromagnetic insulator-topological insulator heterostructures",

abstract = "We demonstrate the van der Waals epitaxy of the topological insulator compound Bi2Te3 on the ferromagnetic insulator Cr 2Ge2Te6. The layers are oriented with (001)Bi2Te3||(001)Cr2Ge2Te 6 and (110)Bi2Te3||(100)Cr2Ge 2Te6. Cross-sectional transmission electron microscopy indicates the formation of a sharp interface. At low temperatures, bilayers consisting of Bi2Te3 on Cr2Ge 2Te6 exhibit a large anomalous Hall effect (AHE). Tilted field studies of the AHE indicate that the easy axis lies along the c-axis of the heterostructure, consistent with magnetization measurements in bulk Cr 2Ge2Te6. The 61 K Curie temperature of Cr 2Ge2Te6 and the use of near-stoichiometric materials may lead to the development of spintronic devices based on the AHE.",

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doi = "10.1063/1.4892353",

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T1 - Large anomalous Hall effect in ferromagnetic insulator-topological insulator heterostructures

AU - Alegria, L. D.

AU - Ji, H.

AU - Yao, N.

AU - Clarke, J. J.

AU - Cava, R. J.

AU - Petta, J. R.

PY - 2014/8/4

Y1 - 2014/8/4

N2 - We demonstrate the van der Waals epitaxy of the topological insulator compound Bi2Te3 on the ferromagnetic insulator Cr 2Ge2Te6. The layers are oriented with (001)Bi2Te3||(001)Cr2Ge2Te 6 and (110)Bi2Te3||(100)Cr2Ge 2Te6. Cross-sectional transmission electron microscopy indicates the formation of a sharp interface. At low temperatures, bilayers consisting of Bi2Te3 on Cr2Ge 2Te6 exhibit a large anomalous Hall effect (AHE). Tilted field studies of the AHE indicate that the easy axis lies along the c-axis of the heterostructure, consistent with magnetization measurements in bulk Cr 2Ge2Te6. The 61 K Curie temperature of Cr 2Ge2Te6 and the use of near-stoichiometric materials may lead to the development of spintronic devices based on the AHE.

AB - We demonstrate the van der Waals epitaxy of the topological insulator compound Bi2Te3 on the ferromagnetic insulator Cr 2Ge2Te6. The layers are oriented with (001)Bi2Te3||(001)Cr2Ge2Te 6 and (110)Bi2Te3||(100)Cr2Ge 2Te6. Cross-sectional transmission electron microscopy indicates the formation of a sharp interface. At low temperatures, bilayers consisting of Bi2Te3 on Cr2Ge 2Te6 exhibit a large anomalous Hall effect (AHE). Tilted field studies of the AHE indicate that the easy axis lies along the c-axis of the heterostructure, consistent with magnetization measurements in bulk Cr 2Ge2Te6. The 61 K Curie temperature of Cr 2Ge2Te6 and the use of near-stoichiometric materials may lead to the development of spintronic devices based on the AHE.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 053512

ER -

Large anomalous Hall effect in ferromagnetic insulator-topological insulator heterostructures

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