Large anomalous Hall effect in ferromagnetic insulator-topological insulator heterostructures

L. D. Alegria, H. Ji, N. Yao, J. J. Clarke, R. J. Cava, J. R. Petta

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We demonstrate the van der Waals epitaxy of the topological insulator compound Bi2Te3 on the ferromagnetic insulator Cr 2Ge2Te6. The layers are oriented with (001)Bi2Te3||(001)Cr2Ge2Te 6 and (110)Bi2Te3||(100)Cr2Ge 2Te6. Cross-sectional transmission electron microscopy indicates the formation of a sharp interface. At low temperatures, bilayers consisting of Bi2Te3 on Cr2Ge 2Te6 exhibit a large anomalous Hall effect (AHE). Tilted field studies of the AHE indicate that the easy axis lies along the c-axis of the heterostructure, consistent with magnetization measurements in bulk Cr 2Ge2Te6. The 61 K Curie temperature of Cr 2Ge2Te6 and the use of near-stoichiometric materials may lead to the development of spintronic devices based on the AHE.

Original languageEnglish (US)
Article number053512
JournalApplied Physics Letters
Issue number5
StatePublished - Aug 4 2014

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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