We demonstrate the van der Waals epitaxy of the topological insulator compound Bi2Te3 on the ferromagnetic insulator Cr 2Ge2Te6. The layers are oriented with (001)Bi2Te3||(001)Cr2Ge2Te 6 and (110)Bi2Te3||(100)Cr2Ge 2Te6. Cross-sectional transmission electron microscopy indicates the formation of a sharp interface. At low temperatures, bilayers consisting of Bi2Te3 on Cr2Ge 2Te6 exhibit a large anomalous Hall effect (AHE). Tilted field studies of the AHE indicate that the easy axis lies along the c-axis of the heterostructure, consistent with magnetization measurements in bulk Cr 2Ge2Te6. The 61 K Curie temperature of Cr 2Ge2Te6 and the use of near-stoichiometric materials may lead to the development of spintronic devices based on the AHE.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - Aug 4 2014|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)