Langmuir-Blodgett films of regioregular poly(3-hexylthiophene) as field-effect transistors

Guofeng Xu, Zhenan Bao, John Taylor Groves

Research output: Contribution to journalArticle

175 Scopus citations

Abstract

The application of Langmuir-Blodgett (LB) techniques to conjugated polymers offers a unique approach for constructing molecular devices. In this paper, we made thin film field-effect transistors (FET) by LB techniques, based on regioregular poly(3-hexylthiophene) (RR-PHT). Langmuir films of RR-PHT were stable at the air-water interface and could be transferred onto hydrophobic substrates by horizontal deposition. The LB films prepared from three different methods were characterized by UV-Vis absorption spectroscopy, polarized visible absorption, X-ray diffraction, reflective absorption IR spectroscopy, and field-effect mobility. The field-effect mobility of these FETs were among the highest of polymeric thin film LB FET devices.

Original languageEnglish (US)
Pages (from-to)1834-1841
Number of pages8
JournalLangmuir
Volume16
Issue number4
DOIs
StatePublished - Feb 22 2000

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Spectroscopy
  • Electrochemistry

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