Kondo-like zero-bias anomaly in electronic transport through an ultrasmall si quantum dot

L. P. Rokhinson, L. J. Guo, S. Y. Chou, D. C. Tsui

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

We have studied charge transport through an ultrasmall Si single electron transistor. We find that at low temperatures, the Coulomb blockade is partially lifted at certain gate voltages. Furthermore, we observed an enhancement of the differential conductance at zero bias. The magnetic field dependence of this zero-bias anomaly is different from that of the Kondo peaks reported in GaAs quantum dots: we observed no splitting of the zero-bias peak with magnetic field.

Original languageEnglish (US)
Pages (from-to)R16319-R16321
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume60
Issue number24
DOIs
StatePublished - Jan 1 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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