Abstract
We present gate-dependent transport measurements of Kondo impurities in bare gold break junctions, generated with high yield using an electromigration process that is actively controlled. Thirty percent of measured devices show zero-bias conductance peaks. Temperature dependence suggests Kondo temperatures ∼7 K. The peak splitting in magnetic field is consistent with theoretical predictions for g = 2, though in many devices the splitting is offset from 2gμ BB by a fixed energy. The Kondo resonances observed here may be due to atomicscale metallic grains formed during electromigration.
Original language | English (US) |
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Pages (from-to) | 1685-1688 |
Number of pages | 4 |
Journal | Nano Letters |
Volume | 5 |
Issue number | 9 |
DOIs | |
State | Published - Sep 2005 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Chemistry
- Condensed Matter Physics
- Mechanical Engineering
- Bioengineering
- General Materials Science