Kondo effect in electromigrated gold break junctions

A. A. Houck, J. Labaziewicz, E. K. Chan, J. A. Folk, I. L. Chuang

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118 Scopus citations


We present gate-dependent transport measurements of Kondo impurities in bare gold break junctions, generated with high yield using an electromigration process that is actively controlled. Thirty percent of measured devices show zero-bias conductance peaks. Temperature dependence suggests Kondo temperatures ∼7 K. The peak splitting in magnetic field is consistent with theoretical predictions for g = 2, though in many devices the splitting is offset from 2gμ BB by a fixed energy. The Kondo resonances observed here may be due to atomicscale metallic grains formed during electromigration.

Original languageEnglish (US)
Pages (from-to)1685-1688
Number of pages4
JournalNano Letters
Issue number9
StatePublished - Sep 1 2005
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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    Houck, A. A., Labaziewicz, J., Chan, E. K., Folk, J. A., & Chuang, I. L. (2005). Kondo effect in electromigrated gold break junctions. Nano Letters, 5(9), 1685-1688. https://doi.org/10.1021/nl050799i